Abrading plate and polishing method using the same
First Claim
1. An abrading plate for polishing an object to produce a flat and mirror surface thereon, said abrading plate comprising:
- abrasive particles having a particle size of less than two micrometers, a chemical purity of more than 90%, and a Na concentration of below 100 ppm;
a binder material; and
a porosity;
wherein a ratio of said abrasive particles and said binder material is 1;
x, where x is not less than 0.5 by volume, and said abrasive particles, said binder material and said porosity are in a proportion such that said abrasive particles are not less than 10% by volume, said binder material is not more than 60% by volume, and said porosity is 10˜
40% by volume.
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Accused Products
Abstract
The present invention provides an abrading plate having self-stopping capability such that when an object, such as a semiconductor wafer having a device structure that includes raised regions and depressed regions fabricated on the surface, is being polished, the raised regions are removed and polishing stops automatically. A method of using the abrading plate is also provided.
The present invention relates to an abrading plate that produces a flat and mirror polished surface on an object with an abrading plate comprised by abrasive particles having a chemical purity of not less than 90% and a particle size of not more than two micrometers; a binder material; and a given volume of porosity, wherein a ratio of the abrasive particles and the binder material is not less than 1:0.5 by volume, and proportions of abrasive particles, a binder material and porosity are, respectively, not less than 10%, not more than 60% and 10˜40 by volume.
The method is provided for polishing an object having a device structure that includes raised regions and depressed regions fabricated on the surface according to the steps of polishing the surface for a given duration with a liquid not containing abrasive particles so as to eliminate the raised regions to obtain a flat surface, and performing additional surface removal by supplying abrasive particles to the polishing interface to remove surface material uniformly from the entire surface.
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Citations
22 Claims
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1. An abrading plate for polishing an object to produce a flat and mirror surface thereon, said abrading plate comprising:
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abrasive particles having a particle size of less than two micrometers, a chemical purity of more than 90%, and a Na concentration of below 100 ppm;
a binder material; and
a porosity;
wherein a ratio of said abrasive particles and said binder material is 1;
x, where x is not less than 0.5 by volume, and said abrasive particles, said binder material and said porosity are in a proportion such that said abrasive particles are not less than 10% by volume, said binder material is not more than 60% by volume, and said porosity is 10˜
40% by volume.- View Dependent Claims (2)
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3. An abrading plate for polishing an object having a raised and depressed pattern thereon to produce a flat and mirror polished surface, said abrading plate comprising abrasive particles having a chemical purity of more than 90% and a Na concentration of below 100 ppm;
- wherein said abrading plate comprises said abrasive particles, a binder material, and a porosity.
- 4. A method for polishing an object having a raised and depressed pattern thereon to produce a flat and mirror polished surface, wherein said method is comprised by using an abrading plate, which comprises abrasive particles having a chemical purity of more than 90% and a Na concentration of below 100 ppm, a binder material, and a porosity.
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14. A method for polishing a semiconductor wafer having a raised and depressed pattern thereon to produce a flat and mirror polished surface, said method comprising:
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polishing said semiconductor wafer by using an abrading plate having abrasive particles, binder material and porosity, a proportion of said abrasive particles, binder material and porosity being such that said abrasive particles are 10%-60% by volume, said binder material is 30-60% by volume, and said porosity is 10˜
40% by volume,wherein said abrading plate has a self-stopping function which stops or reduces a removal rate of continued polishing after said raised pattern is flattened and the surface has become level.
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15. A method for polishing a semiconductor wafer having a raised and depressed pattern thereon to produce a flat and mirror polished surface, said method comprising:
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polishing said semiconductor wafer by using an abrading plate having abrasive particles, binder material and porosity, a proportion of said abrasive particles, binder material and porosity being such that said abrasive particles are 10-60% by volume, said binder material is 30-60% by volume, and said porosity is 10˜
40% by volume;
wherein said abrasive particles have a Na concentration of below 100 ppm.
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16. A polishing apparatus having an abrading plate for polishing an object to produce a flat and mirror surface thereon, said abrading plate comprising:
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abrasive particles having a particle size of less than two micrometers, a chemical purity of more than 90%, and a Na concentration of below 100 ppm;
a binder material; and
a porosity;
wherein a ratio of said abrasive particles and said binder materials is 1;
x, where x is not less than 0.5 by volume, and a proportion of said abrasive particles, said binder material and said porosity is such that said abrasive particles are not less than 10% by volume, said binder material is not more than 60% by volume, and said porosity 10˜
40% by volume.
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17. A polishing apparatus having an abrading plate for polishing an object having raised and depressed patterns thereon to produce a flat and mirror polished surface, said abrading plate comprising abrasive particles having a chemical purity of more than 90% and a Na concentration of below 100 ppm;
- wherein said abrading plate comprises said abrasive particles, binder material, and a porosity.
- View Dependent Claims (18, 19, 20, 21)
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22. An abrading plate for polishing an object having a raised and depressed pattern thereon, said abrading plate comprising:
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abrasive particles;
a binder; and
a porosity;
wherein a proportion by volume of said abrasive particles, binder, and porosity is such that said abrasive particles are 10-60% by volume, said binder material is 30-60% by volume, and said porosity is 10˜
40% by volume and said abrading plate having a self-stopping function which stops or reduces a removal rate of continued polishing after said raised patterns are flattened and the surface has become level.
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Specification