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GaN single crystal substrate and method of producing same

  • US 6,413,627 B1
  • Filed: 06/15/1999
  • Issued: 07/02/2002
  • Est. Priority Date: 06/18/1998
  • Status: Expired due to Term
First Claim
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1. A GaN single crystal substrate having a diameter longer than 20 mm, a thickness more than 0.07 mm and being freestanding.

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