Method of programmability and an architecture for cold sparing of CMOS arrays

• US 6,414,360 B1
• Filed: 06/09/1998
• Issued: 07/02/2002
• Est. Priority Date: 06/09/1998
• Status: Expired due to Term

• Current Assignee: Aeroflex Colorado Springs Incorporated (Cobham PLC)
• Original Assignee: Aeroflex UTMC Microelectronics Systems Incorporated
• Inventors: Gardner, Harry N.
• Primary Examiner(s): Munson, Gene M.
• Application Number:
  US09/094,344
• Time in Patent Office: 1,484 Days
• Field of Search: 257/369, 326/58, 326/81
• US Class Current: 257/369
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/0925 comprising an N-well only in the substrate

Abstract

A P-channel transistor is disclosed having P+ source and drain regions formed in a N− well, which is formed in a P− substrate. A third P+ region is provided that functions as a well tie. When the P-channel transistor is used as the pull-up transistor in a CMOS “push-pull” output buffer circuit, the P+ well tie prevents undesired current flow from the bus back to the positive voltage supply. This prevents potential damage to the power supply plane and any additional components connected thereto. In another aspect, the N− well has formed therein both a P+ and N+ well tie. Additional switch circuitry is provided which allows for upper level programmability or selection of either one or both of the two well ties, depending upon the ultimate circuit configuration.

Claims

1. A P-channel, metal oxide semiconductor field effect transistor, comprising:

a substrate comprised of silicon semiconductor material having a P−

electrical conductivity;

a well region formed in the silicon semiconductor substrate, the well region having an N−

electrical conductivity;

a drain region formed in the well region, the drain region having a P+ electrical conductivity;

a source region formed in the well region, the source region having a P+ electrical conductivity;

a channel region formed in the well region, the channel region being located between the drain region and the source region;

a gate terminal disposed above the well region formed in the silicon semiconductor substrate in proximity to the channel region, the gate terminal being separated from the channel region by an insulating region;

a first well tie region formed in the well region, the first well tie region having a P+ electrical conductivity and being separate from the source region; and

a second well tie region formed in the well region, the second well tie region having an N+ electrical conductivity, wherein the first well tie region and the second well tie region being connected to separate control lines of an external switching circuit.

2. The transistor of claim 1, further comprising switching means, connected to both the first well tie region and the second well tie region, for selectively connecting at least one of the first and second well tie regions with a corresponding at least one signal line.

3. A complimentary metal-oxide semiconductor (CMOS) transistor formed on a semiconductor substrate having a first conductivity type region and a second conductivity type region, comprising:

a first metal-oxide semiconductor (MOS) transistor formed in the first conductivity type region, the first MOS transistor comprising a first source region, a first drain region, a first well tie region and a second well tie region, the first well tie region being separate from the first source region and having a conductivity type which is different from the first conductivity type region and the second well tie region being separate from both the first well tie region and the source region, the second well tie region having a conductivity type which is the same as the first conductivity type region, the first and the second well tie regions each being connected to separate control lines of an external switching circuit to charge the first conductivity type region; and

a second MOS transistor formed in the second conductivity type region, the second MOS transistor comprising a second source region and a second drain region, the second MOS transistor further comprising a third well tie region having a conductivity type which is the same as the second conductivity type region.

4. The CMOS transistor of claim 3, further comprising a switching circuit connected to the first well tie region and the second well tie region, the switching circuit selectively connecting at least one of the first and second well tie regions with at least one signal line.

5. The CMOS transistor of claim 3, wherein the first conductivity type region is a doped n-well, the second conductivity type region is a p-type substrate and the first MOS transistor is a p-channel transistor formed in the doped n-well region of the p-type substrate.

6. The CMOS transistor of claim 3, wherein the first conductivity type region is a doped p-well, the second conductivity type region is a n-type substrate and the first MOS transistor is a n-channel transistor formed in the doped p-well region of the n-type substrate.