Semiconductor device including a chip having high-frequency circuit blocks

• US 6,414,387 B1
• Filed: 05/15/2000
• Issued: 07/02/2002
• Est. Priority Date: 09/20/1999
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Asano, Hiroyuki, Hara, Shinji
• Primary Examiner(s): Cao, Phat X.
• Application Number:
  US09/571,659
• Time in Patent Office: 778 Days
• Field of Search: 257/691, 257/692, 257/503, 257/784
• US Class Current: 257/691
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/4809 Loop shape
• CPC Class Codes: H01L 2224/48095 Kinked
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48599 Principal constituent of the connecting portion of the wire connector being Gold (Au)
• CPC Class Codes: H01L 2224/48699 Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
• CPC Class Codes: H01L 2224/48799 Principal constituent of the connecting portion of the wire connector being Copper (Cu)
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/10161 : with a rectangular active surface
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1423 : Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching

Abstract

A semiconductor device includes a high-frequency-use semiconductor chip having high frequency circuit blocks. The semiconductor chip is mounted on a circuit substrate and electrical connectors are provided for electrically connecting each one of the high frequency circuit blocks in the semiconductor chip to the circuit substrate. The electrical connectors situated adjacent to each other are provided such that the distance between first contacts at which the electrical connectors are electrically connected to the respective high frequency circuit blocks is smaller than the distance between second contacts at which the electrical connectors are electrically connected to the circuit substrate.

Claims

1. A semiconductor device, comprising:

a high-frequency-use semiconductor chip including high frequency circuit blocks situated adjacent to each other;

a circuit substrate on which the semiconductor chip is mounted; and

electrical connect means each provided for electrically connecting one of the high frequency circuit blocks in the semiconductor chip to the circuit substrate,

wherein the electrical connect means situated adjacent to each other are provided such that the ratio of a distance between second contacts at which the electrical connect means are connected to the circuit substrate to a distance between first contacts at which the electrical connect means are connected to the respective high frequency circuit blocks is in the range of 1.2 to 3.

2. The semiconductor device as set forth in claim 1, wherein

the electrical connect means are used to provide grounding.

3. The semiconductor device as set forth in claim 1, wherein

the electrical connect means are electrically conducting bonding wires.

4. The semiconductor device as set forth in claim 1, wherein the distance between the second contacts is 1.3 to 2.5 times that between the first contacts.

5. The semiconductor device as set forth in claim 1, wherein the distance between the second contacts is 1.4 to 2.2 times that between the first contacts.

6. The semiconductor device as set forth in claim 1, wherein

the electrical connect means are provided such that the distance between the electrical connect means increases starting at the first contacts toward the second contacts.

7. The secmiconductor device as set forth in claim 1, wherein the electrical connect means are provided such that the distance between the electrical connect means monotonically increases starting at the first contacts toward the second contacts.

8. The semiconductor device as set forth in claim 1, wherein

the electrical connect means are provided such that the distance between the electrical connect means increases starting at the first contacts toward the second contacts at a fixed rate.

9. The semiconductor device as set forth in claim 1, wherein

the circuit substrate includes a ground electrode serving as the second contacts for the electrical connect means.

10. The semiconductor device as set forth in claim 9, wherein

the semiconductor chip is mounted on the ground electrode.

11. The semiconductor device as set forth in claim 10, wherein

the ground electrode has a surface area greater than a bottom area of the semiconductor chip.

12. The semiconductor device as set forth in claim 1, wherein

an adjacent pair of the electrical connect means are provided so as to be symmetric with respect to a virtual plane crossing the circuit substrate where the second contacts are disposed.

13. The semiconductor device as set forth in claim 12, wherein

the virtual symmetric plane crosses the circuit substrate at substantially right angles.

14. The semiconductor device as set forth in claim 1, wherein

a dummy conductor set to a ground potential is positioned between the electrical connect means.

15. The semiconductor device as set forth in claim 14, wherein

the dummy conductor is an electrically conducting wire.

16. The semiconductor device as set forth in claim 14, wherein

the dummy conductor is positioned substantially equal distances away from the electrical connect means that form an adjacent pair.

17. The semiconductor device as set forth in claim 14, wherein

the dummy conductor is positioned midway between the electrical connect means that form an adjacent pair.

18. The semiconductor device as set forth in claim 1, wherein

at least one of the high frequency circuit blocks includes an amplifier circuit having a gain at 1 MHz or higher frequencies.

19. The semiconductor device as set forth in claim 1, wherein

the high frequency circuit blocks operate alternately.

20. The semiconductor device as set forth in claim 1, wherein

the first contacts are situated adjacent to each other and the distance therebetween is about 100 micrometers to 400 micrometers.

21. The semiconductor device as set forth in claim 2, wherein

the high frequency circuit blocks have respective signal-use bonds;

and

the signal-use bonds are situated so as to sandwich the ground-use electrical connect means.

22. A semiconductor device comprising:

a chip mounted on a circuit substrate, the chip comprising adjacent first and second high frequency circuit blocks;

a first bonding wire connecting a contact on the first high-frequency circuit block to the circuit substrate; and

a second bonding wire, adjacent to the first bonding wire, connecting a contact on the second high-frequency circuit block to the circuit substrate,

wherein the ratio of the distance between the ends of the first and second bonding wires connected to the circuit substrate to the distance between the ends of the first and second bonding wires connected to the respective contacts of the high-frequency circuit blocks is in the range of 1.2 to 3.

23. The semiconductor device as set forth in claim 22, wherein the first and second high-frequency circuit blocks each comprises an amplifier circuit.

24. The semiconductor device as set forth in claim 22, wherein the first and second bonding wires are ground wires.

25. The semiconductor device as set forth in claim 22, wherein the first and second bonding wires are signal wires.

26. The semiconductor device as set forth in claim 22, wherein the ratio is in the range of 1.3 to 2.5.

27. The semiconductor device as set forth in claim 22, wherein the ratio is in the range of 1.4 to 2.2.

28. The semiconductor device as set forth in claim 22, further comprising:

a third bonding wire connecting to a contact on the first high-frequency circuit block and extending in parallel to the first bonding wire; and

a fourth bonding wire connecting to a contact on the second high-frequency circuit block and extending in parallel to the second bonding wire.

29. The semiconductor device as set forth in claim 22, wherein the third and fourth bonding wires are signal wires.

30. The semiconductor device as set forth in claim 22, further comprising:

a dummy wire disposed between the first and second bonding wires.

31. The semiconductor device as set forth in claim 30, wherein the dummy wire is disposed at substantially equal distances from both the first and second bonding wires.

32. The semiconductor device as set forth in claim 30, wherein both ends of the dummy wire are connected to the circuit substrate.

33. The semiconductor device as set forth in claim 30, wherein the dummy wire and the first and second bonding wires all have the same straight-line length.

34. The semiconductor device as set forth in claim 22, wherein the first bonding wire extends perpendicularly from a side of the first high-frequency circuit block and the second bonding wire extends non-perpendicularly from a corresponding side of the second high-frequency circuit block.

35. The semiconductor device as set forth in claim 22, wherein the first bonding wire extends non-perpendicularly from a side of the first high-frequency circuit block and the second bonding wire extends non-perpendicularly from a corresponding side of the second high-frequency circuit block.

36. The semiconductor device as set forth in claim 22, wherein the adjacent first and second high-frequency circuit blocks operate alternately.