Semiconductor device capable of preventing disconnection in a through hole

• US 6,414,395 B1
• Filed: 09/17/1999
• Issued: 07/02/2002
• Est. Priority Date: 05/24/1999
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Hagi, Kimio, Ookuma, Yuuko
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): VU, HUNG K
• Application Number:
  US09/398,475
• Time in Patent Office: 1,019 Days
• Field of Search: 257/751, 257/753, 257/758, 257/773, 257/774, 438/618, 438/629, 438/637, 438/639
• US Class Current: 257/773
• CPC Class Codes: H01L 21/76804 by forming tapered via holes
• CPC Class Codes: H01L 21/76805 the opening being a via or contact hole penetrating the underlying conductor
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

A through hole passes through an interlayer isolation film and an antireflection film, to partially expose a surface of a first wiring layer. A clearance filling member fills up a clearance under an inner edge of the antireflection film. A barrier metal film continuously covers the exposed surface of the first wiring layer, an inner wall surface of the through hole and a surface of the interlayer isolation film. Passing through the through hole, a second wiring layer is connected with the first wiring layer through the barrier metal film. Thus provided is a method of fabricating a semiconductor device improved to be capable of avoiding disconnection of a wire in a through hole.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a first wiring layer, provided on said semiconductor substrate, having an antireflection film thereon;

an interlayer isolation film provided on said semiconductor substrate to cover said first wiring layer; and

a through hole passing through said interlayer isolation film and said antireflection film for partially exposing a surface of said first wiring layer,

an inner edge of said antireflection film horizontally extending in said through hole,

the semiconductor device further comprising;

a clearance filling member filling up a clearance under said inner edge;

a barrier metal film continuously covering exposed said surface of said first wiring layer, an inner wall surface of said through hole and a surface of said interlayer isolation film; and

a second wiring layer passing through said through hole, provided on said interlayer isolation film to be connected with said first wiring layer through said barrier metal film, wherein said clearance filling member fills a second clearance over said inner edge, said second clearance defined by an inner wall of said interlayer isolation film and a top surface of said inner edge.

2. The semiconductor device in accordance with claim 1, wherein said clearance filling member is made of a material obtained by etching a surface of said semiconductor substrate by sputtering.

3. The semiconductor device of claim 1, wherein said through hole extends at least partially through said first wiring layer, thereby forming a groove in said first wiring layer.

4. The semiconductor device of claim 1, wherein said antireflection film is directly connected to said first wiring layer.

5. The semiconductor device of claim 1, wherein said second wiring layer completely fills said through hole.