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Gas distribution apparatus for semiconductor processing

  • US 6,415,736 B1
  • Filed: 06/30/1999
  • Issued: 07/09/2002
  • Est. Priority Date: 06/30/1999
  • Status: Expired due to Term
First Claim
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1. A gas distribution system useful for semiconductor substrate processing, comprising:

  • a support body;

    a gas distribution chamber;

    a gas supply inlet through which pressurized process gas flows into the gas distribution chamber;

    a showerhead supported by the support body such that pressurized process gas in the gas distribution chamber applies pressure to a backside of the showerhead and passes through openings extending between the backside and an opposite side of the showerhead, the showerhead being a showerhead electrode of a plasma chamber; and

    a contoured surface in the gas distribution chamber, the contoured surface being effective to provide a desired gas pressure distribution at the backside of the showerhead electrode, and wherein the contoured surface comprises a nonplanar upper and/or lower surface of a baffle plate having openings therethrough and the gas distribution chamber comprises an upper plenum above the baffle plate and a lower plenum below the baffle plate.

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