Leaky lower interface for reduction of floating body effect in SOI devices
First Claim
1. A method of fabricating a semiconductor device, comprising:
- forming a first wafer having a first semiconductor substrate, a first insulating layer on the semiconductor substrate, and an altered interface region along an interface between the semiconductor substrate and the insulating layer;
bonding the first wafer to a second wafer having a second substrate and a second insulating layer on the substrate, the first and second insulating layers being bonded together;
removing a portion of the first semiconductor substrate to leave a semiconductor thin film on the first insulating layer; and
forming a body region of a first conductivity type and a source region of a second conductivity type in the thin film, the body region and the source region being electrically connected by the altered interface region.
2 Assignments
0 Petitions
Accused Products
Abstract
A silicon on insulator (SOI) device includes an electrically-conducting interface region along a portion of the interface between the insulator and a semiconductor layer atop the insulator. The electrically-conducting interface region provides a “leaky” electrical coupling between the body and source regions of a transistor device such as a “MOSFET”, thereby reducing floating body effects of the device. A method of forming such a semiconductor device includes forming the electrically-conducting interface region by damaging or implanting materials in the insulator and/or the semiconductor in the vicinity of the interface therebetween. The method may include producing a stepped interface region, such as by etching, in order to aid properly locating the transistor device relative to the electrically-conducting interface region.
-
Citations
30 Claims
-
1. A method of fabricating a semiconductor device, comprising:
-
forming a first wafer having a first semiconductor substrate, a first insulating layer on the semiconductor substrate, and an altered interface region along an interface between the semiconductor substrate and the insulating layer;
bonding the first wafer to a second wafer having a second substrate and a second insulating layer on the substrate, the first and second insulating layers being bonded together;
removing a portion of the first semiconductor substrate to leave a semiconductor thin film on the first insulating layer; and
forming a body region of a first conductivity type and a source region of a second conductivity type in the thin film, the body region and the source region being electrically connected by the altered interface region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A method of fabricating a semiconductor device, comprising:
-
forming an altered interface region at an interface between a semiconductor material and an insulating layer removing a portion of the semiconductor material to leave a remaining semiconductor material film; and
thereafter forming a body region of a first conductivity type and a source region of a second conductivity type in the semiconductor material film, the body region and the source region being electrically connected by the altered interface region. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
-
Specification