Semiconductor substrate and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, the outer peripheral extremity of the semiconductor layer being located inside the outer peripheral extremity of the insulation layer and the outer peripheral extremity of the insulation layer being located inside between the outer peripheral extremity of the semiconductor layer and that of the support member so that the outer peripheral portion of the semiconductor substrate including the insulation layer and the semiconductor layer shows a stepped profile, comprising steps of removing an extreme portion from the insulation layer and also an extreme portion from the semiconductor layer so as to make both the outer peripheral extremity of the insulation layer and that of the semiconductor layer to be located inside the outer peripheral extremity of the support member and removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the insulation layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.
257 Citations
18 Claims
- 1. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, the outer peripheral extremity of the semiconductor layer being located inside the outer peripheral extremity of the insulation layer and the outer peripheral extremity of the insulation layer being located inside between the outer peripheral extremity of the semiconductor layer and that of the support member so that the outer peripheral portion of the semiconductor substrate including the insulation layer and the semiconductor layer shows a stepped profile, comprising steps of removing an extreme portion from the insulation layer and also an extreme portion from the semiconductor layer so as to make both the outer peripheral extremity of the insulation layer and that of the semiconductor layer to be located inside the outer peripheral extremity of the support member and removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the insulation layer.
- 2. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, the outer peripheral extremity of the semiconductor layer being located inside the outer peripheral extremity of the insulation layer and the outer peripheral extremity of the insulation layer being located between the outer peripheral extremity of the semiconductor layer and that of the support member so that the outer peripheral portion of the semiconductor substrate including the insulation layer and the semiconductor layer shows a stepped profile, comprising steps of removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the support member and also inside the outer peripheral extremity of the insulation layer and removing an extreme portion of the insulation layer so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member such that the offset between the bottom of the outer peripheral extremity of the semiconductor layer and the top of the outer peripheral extremity of the insulation layer is not smaller than 2 microns and the lateral surface of the outer peripheral portion of the insulation layer is inclined to show an obtuse angle with the top surface thereof.
- 10. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, said method comprising steps of removing each extreme portion from the insulation layer and the semiconductor layer so as to make both the outer peripheral extremity of the insulation layer and that of the semiconductor layer to be located inside the outer peripheral extremity of the support member and removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the insulation layer.
- 11. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, said method comprising steps of removing each extreme portion from the insulation layer and the semiconductor layer so as to make both the outer peripheral extremity of the insulation layer and that of the semiconductor top layer to be located inside the outer peripheral extremity of the support member and removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the insulation layer such that the offset between the bottom of the outer peripheral extremity of the semiconductor layer and the top of the outer peripheral extremity of the insulation layer is not smaller than 2 microns and the lateral surface of the outer peripheral portion of the insulation layer is inclined to show an obtuse angle with the top surface thereof.
Specification