Method for improving the moisture absorption of porous low dielectric film

• US 6,417,118 B1
• Filed: 06/26/2001
• Issued: 07/09/2002
• Est. Priority Date: 06/26/2001
• Status: Expired due to Fees

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Chen, Lih-Juann, Hu, Jung-Chih
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US09/888,583
• Time in Patent Office: 378 Days
• Field of Search: 438/4, 438/778, 438/781, 438/787, 438/795, 438/960, 438/974, 438/790
• US Class Current: 438/790
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/02137 the material comprising alkyl silsesquioxane, e.g. MSQ
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02343 treatment by exposure to a liquid
• CPC Class Codes: H01L 21/02359 treatment to change the surface groups of the insulating layer
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3124 layers comprising hydrogen silsesquioxane
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: Y10S 438/96 Porous semiconductor
• CPC Class Codes: Y10S 438/974 Substrate surface preparation

Abstract

A method for improving the moisture absorption of porous low dielectric film in an interconnect structure is disclosed. The porous low-k dielectric layer such as porous hydrosilsesquioxane (porous HSQ) or porous methyl silsesquioxane (porous MSQ) is spun-on the etching stop layer. After plasma process, the porous low dielectric film has a plurality of dangling bonds. Then, the wafer is placed in the supplementary instrument with hydrophobic reactive solution. Next, the hydrophobic protection film is formed on surface and sidewall of porous low-k dielectric film to improve the moisture absorption of porous low-k dielectric film and the leakage current is reduced in subsequently processes.

Claims

1. A method for improving the moisture absorption of dielectric film, said method comprising:

providing a dielectric film having a via hole on a semiconductor substrate, wherein said dielectric film has a plurality of dangling bond and characteristic of said dangling bond is hydrophilic; and

treating said dielectric film with a siloxane solution and an ultrasonic vibration apparatus such that the characteristic of said dielectric film is changed hydrophobic from hydrophilic.

2. The method according to claim 1, wherein material of said dielectric film comprises porous methyl silsesquioxane (porous MSQ).

3. The method according to claim 1, wherein material of said dielectric film comprises porous hydrosilsesquioxane (porous HSQ).

4. The method according to claim 1, wherein the chemical formula of said siloxane solution comprises hydrogen atom.

5. The method according to claim 1, wherein the chemical formula of said siloxane solution comprises a straight chain alkyl group.

6. The method according to claim 1, further comprising a catalyst in said ultrasonic vibration apparatus.

7. The method according to claim 1, further comprising a purging process is performed on said dielectric film by nitrogen gas.

8. The method according to claim 1, further comprising a baking process is performed on said dielectric film in a nitrogen furnace.

9. A method for improving the moisture absorption of the low dielectric film, said method comprising:

placing a low dielectric film in an ultrasonic vibration apparatus, and a siloxane solution and a catalyst therein, wherein said low dielectric layer has a plurality of dangling bonds and the characteristic of said dangling bonds is hydrophilic;

treating said low dielectric film such that said characteristic of said dangling bonds is changed hydrophobic from hydrophilic;

rinsing said low dielectric film such that said siloxane solution remained on said low dielectric film is to be cleaned;

purging said low dielectric film; and

backing said low dielectric film.

10. The method according to claim 9, wherein said low dielectric film comprises porous methyl silsesquioxane (porous MSQ).

11. The method according to claim 9, wherein said low dielectric film comprises porous hydrosilsesquioxane (porous HSQ).

12. The method according to claim 9, wherein the chemical formula of said siloxane solution comprises hydrogen atom.

13. The method according to claim 9, wherein the chemical formula of said siloxane solution comprises a straight chain alkyl group.

14. A method for improving the moisture absorption of the porous low dielectric film, said method comprising:

placing a porous low dielectric film in an ultrasonic vibration apparatus and a siloxane solution therein, wherein said porous low dielectric film has a plurality of dangling bonds and the characteristic of said dangling bonds is hydrophilic;

treating said porous low dielectric film such that said characteristic of said dangling bonds is changed hydrophobic from hydrophilic;

rinsing said porous low dielectric film by deionization water such that said siloxane solution remained on said porous low dielectric film is to be cleaned;

purging said porous low dielectric film by nitrogen gas; and

backing said porous low dielectric film in a nitrogen furance.

15. The method according to claim 14, wherein said porous low dielectric film comprises porous methyl silsesquioxane (porous MSQ).

16. The method according to claim 14, wherein said porous low dielectric film comprises porous hydrosilsesquioxane (porous HSQ).

17. The method according to claim 14, wherein the chemical formula of said siloxane solution comprises hydrogen atom.

18. The method according to claim 14, wherein the chemical formula of said siloxane solution comprises a straight chain alkyl group.

19. The method according to claim 14, further comprising a catalyst in said ultrasonic vibration apparatus such that the reaction rate of said dangling bond from hydrophilic to hydrophobic is increased.

20. The method according to claim 19, wherein said catalyst is selected from the group consisting of a sulfuric acid solution, a hydrochloric acid solution, and a nitric acid solution.