High-frequency amplifier circuit with negative impedance cancellation

• US 6,417,734 B1
• Filed: 06/26/2000
• Issued: 07/09/2002
• Est. Priority Date: 06/26/2000
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Luo, Sifen, Sowlati, Tirdad
• Primary Examiner(s): Shingleton, Michael B
• Application Number:
  US09/603,875
• Time in Patent Office: 743 Days
• Field of Search: 330/288, 330/296, 330/311, 330/310, 333/213
• US Class Current: 330/296
• CPC Class Codes: H03F 1/301 in MOSFET amplifiers H03F1/303, H03F1/305, H03F1/308 take precedence
• CPC Class Codes: H03F 3/19 with semiconductor devices only
• CPC Class Codes: H03F 3/193 with field-effect devices H03F3/195 takes precedence
• CPC Class Codes: H03F 3/3432 with bipolar transistors
• CPC Class Codes: H03F 3/345 with field-effect devices H03F3/347 takes precedence

Abstract

A high-frequency amplifier circuit includes an amplifying transistor and a driver transistor, with the amplifying transistor being connected in either a common emitter or a common source configuration and the driver transistor being connected in a corresponding common collector or a common drain configuration, depending upon whether bipolar or field effect transistors are used. A current-mirror bias circuit is coupled between an input terminal and an output terminal of the driver transistor, with a resistor being provided for coupling the current mirror to the input terminal of the driver transistor. The resistor, which typically has a value of between about 20 and 100 ohms, provides a negative impedance cancellation effect while minimizing power consumption at low bias levels.

Claims

1. A high-frequency amplifier circuit comprising an amplifying transistor and a driver transistor, the amplifying transistor being connected in one of a common emitter and a common source configuration and the driver transistor being connected in a corresponding one of a common collector and a common drain configuration, a current-mirror bias circuit connected directly to a common terminal and coupled between an input terminal of said driver transistor and an output terminal of said driver transistor, and a resistor connected directly in series with an input terminal of said current mirror for directly connecting said current mirror to said input terminal of said driver transistor through said resistor.

2. A high-frequency amplifier circuit as in claim 1, wherein the amplifying transistor is a bipolar transistor connected in a common emitter configuration, the driver transistor is a bipolar transistor connected in a common collector configuration, and the current-mirror bias circuit comprises bipolar transistors.

3. A high-frequency amplifier circuit as in claim 1, wherein the amplifying transistor is a field effect transistor connected in a common source configuration, the driver transistor is a field effect transistor connected in a common drain configuration, and the current-mirror bias circuit comprises field effect transistors.

4. A high-frequency amplifier circuit as in claim 1, wherein said resistor has a value of between about 20 and about 100 ohms.

5. A high-frequency amplifier circuit as in claim 1, wherein said resistor provides a negative impedance cancellation effect.