Antireflective silicon-containing compositions as hardmask layer

• US 6,420,088 B1
• Filed: 06/23/2000
• Issued: 07/16/2002
• Est. Priority Date: 06/23/2000
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Angelopoulos, Marie, Huang, Wu-Song, Moreau, Wayne M., Aviram, Ari, Kwong, Ranee, Guarnieri, C. Richard
• Primary Examiner(s): Baxter, Janet
• Assistant Examiner(s): Lee, Sin J.
• Application Number:
  US09/602,967
• Time in Patent Office: 753 Days
• Field of Search: 430/270.1, 430/272.1, 430/950, 528/12-18, 528/21, 528/23, 528/25, 528/27, 528/28
• US Class Current: 430/272.1
• CPC Class Codes: C08G 77/20 containing silicon bound to unsaturated aliphatic groups C08G77/045 takes precedence
• CPC Class Codes: C08G 77/38 Polysiloxanes modified by chemical after-treatment C08G77/045 takes precedence
• CPC Class Codes: G03F 7/0757 Macromolecular compounds containing Si-O, Si-C or Si-N bonds G03F7/0752 takes precedence
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: Y10S 430/151 Matting or other surface reflectivity altering material

Abstract

Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.

Claims

1. A composition suitable for formation of a spin-on antireflective layer, said composition comprising:

(a) a polymer containing SiO moieties, a plurality of reactive sites distributed along the polymer for reaction with a crosslinking component, and chromophore moieties,

(b) a crosslinking component, and

(c) an acid generator.

2. The composition of claim 1 wherein said SiO moieties are selected from the group consisting of siloxane moieties and silsesquioxane moieties.

3. The composition of claim 1 wherein said acid generator is a thermally activated acid generator.

4. The composition of claim 1 wherein said chromophore moieties are selected from the group consisting of chrysenes, pyrenes, fluoranthrenes, anthrones, benzophenones, thioxanthones, and anthracenes.

5. The composition of claim 1 wherein said crosslinking component comprises a glycoluril compound.

6. The composition of claim 1 wherein said composition consists essentially of components (a), (b), and (c).

7. The composition of claim 1 wherein said SiO moieties are in a backbone portion of said polymer.

8. The composition of claim 1 wherein said composition contains about 50-98 wt. % of (a), about 1-50 wt. % of (b), and about 1-20 wt. % of (c).