Superconducting damascene interconnected for integrated circuit

• US 6,420,189 B1
• Filed: 04/27/2001
• Issued: 07/16/2002
• Est. Priority Date: 04/27/2001
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Lopatin, Sergey
• Primary Examiner(s): CHRISTIANSON, KEITH ALAN
• Application Number:
  US09/844,845
• Time in Patent Office: 445 Days
• Field of Search: 438/2, 438/618, 438/622, 438/625, 438/627, 438/637, 438/642, 438/643, 438/652, 438/653, 438/678, 257/622, 257/737, 257/741, 257/750, 257/751, 257/752, 257/753, 257/758, 257/761, 257/762, 257/773, 257/774, 257/784, 505/191, 505/220, 505/330, 505/413, 505/475
• US Class Current: 438/2
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/53285 containing superconducting materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method includes forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the barrier layer. In one embodiment, the superconductor has a formula YBa₂Cu₃O_7-x, wherein x≦0.5. In another embodiment, the method includes forming a cavity in an interlevel dielectric; forming a Y—Ba—Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y—Ba—Cu alloy layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy fill; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the dielectric.

Claims

1. A method of forming a superconducting damascene interconnect structure, comprising:

forming a cavity in an interlevel dielectric;

forming a barrier layer in the cavity;

forming a seed layer in the cavity over the barrier layer;

filling the cavity by electrodepositing a Y—

Ba—

Cu alloy; and

annealing in oxygen flow to form a Y—

Ba—

Cu—

O superconductor on the barrier layer.

2. The method of claim 1, wherein the barrier layer comprises one or more of Ta, TaN, TaSiN, TiSiN, WN, Co, Ni, Pd, Mo, W, NiW, NiTa, NiMo, CoW, CoTa, CoMo, PdW, PdTa, and PdMo.

3. The method of claim 2, wherein the barrier layer is formed by CVD, PVD, HCM, electroless, electroplating, IMP, sputtering, or ALD.

4. The method of claim 1, wherein the seed layer is formed from Cu, a Cu—

Ag alloy or Ag.

5. The method of claim 4, wherein the seed layer is formed by electrodeposition or electroless deposition.

6. The method of claim 1, wherein the Y—

Ba—

Cu layer is formed by laser ablation, CVD or sputtering.

7. The method of claim 1, wherein the step of annealing forms the Y—

Ba—

Cu—

O superconductor from the seed layer and the Y—

Ba—

Cu layer.

8. The method of claim 1, wherein the Y—

Ba—

Cu—

O superconductor has a formula YBa₂Cu₃d_7-x, wherein x≦

0.5.

14. The method of claim 1, wherein the Y—

Ba—

Cu—

O superconductor has a formula YBa₂Cu₃O_7-x, wherein x≦

0.5.

9. A method of forming a superconducting damascene interconnect structure, comprising:

forming a cavity in an interlevel dielectric;

forming a Y—

Ba—

Cu alloy layer in the cavity;

forming a seed layer in the cavity over the Y—

Ba—

Cu alloy layer;

filling the cavity by electrodepositing a Y—

Ba—

Cu alloy fill; and

annealing in oxygen flow to form a Y—

Ba—

Cu—

O superconductor on the dielectric.

10. The method of claim 9, wherein the Y—

Ba—

Cu alloy layer is formed by laser ablation, CVD or sputtering.

11. The method of claim 10, wherein the seed layer is formed from Cu, a Cu—

Ag alloy or Ag.

12. The method of claim 11, wherein the seed layer is formed by electrodeposition or electroless deposition.

13. The method of claim 10, wherein the step of annealing forms the Y—

Ba—

Cu—

O superconductor from the Y—

Ba—

Cu alloy layer, the seed layer, and the Y—

Ba—

Cu alloy fill.

15. A damascene interconnect in a semiconductor device, comprising a Y—

Ba—

Cu—

O superconductor formed in a cavity in a dielectric material.

16. The superconductor damascene interconnect of claim 15, wherein the damascene interconnect is in electrical contact with a second interconnect.

17. The superconductor damascene interconnect of claim 15, wherein the cavity further comprises a barrier layer between the interconnect and the cavity.

18. The superconductor damascene interconnect of claim 17, wherein the barrier layer comprises one or more of Ta, TaN, TaSiN, TiSiN, WN, Co, Ni, Pd, Mo, W, NiW, NiTa, NiMo, CoW, CoTa, CoMo, PdW, PdTa, and PdMo.

19. The superconductor damascene interconnect of claim 17, wherein the cavity further comprises a seed layer between the interconnect and the barrier layer.

20. The superconductor damascene interconnect of claim 15, wherein the Y—

Ba—

Cu—

O superconductor has a formula YBa₂Cu₃O_7-x, wherein x≦

0.5.