Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks

• US 6,420,199 B1
• Filed: 08/06/2001
• Issued: 07/16/2002
• Est. Priority Date: 02/05/1999
• Status: Expired due to Term

• Current Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Original Assignee: Lumileds Lighting US LLC (Apollo Global Management, Inc.)
• Inventors: Song, Yoon-Kyu, Kish, Fred A. Jr., Nurmikko, Arto V., Kern, R. Scott, Coman, Carrie Carter, Krames, Michael R
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US09/923,711
• Publication Number:
  US 20020030198A1
• Time in Patent Office: 344 Days
• Field of Search: 438/22, 438/33, 438/46, 438/455, 438/458, 438/459, 438/460, 438/464, 438/977
• US Class Current: 438/22
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01S 5/0216 using an intermediate compound, e.g. a glue or solder
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/1838 Reflector bonded by wafer fusion or by an intermediate compound
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Claims

1. A method for fabricating a Al_xGa_yIn_zN structure, comprising the steps of:

attaching a host substrate to a first mirror stack;

fabricating a Al_xGa_yIn_zN structure on a sacrificial growth substrate;

creating a wafer bond interface;

removing the sacrificial growth substrate; and

depositing electrical contacts to the Al_xGa_yIn_zN structure.

2. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 1, wherein the step for removing the sacrificial growth substrate comprises the step of laser melting.

3. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 1, further comprising the step of attaching an intermediate bonding layer at the wafer bond interface.

4. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 3, wherein one of the host substrate and the intermediate bonding layer is selected to be compliant.

5. A method for fabricating a Al_xGa_yIn_zN structure, as defined in claim 1, further comprising the step of attaching a second mirror stack on top of the Al_xGa_yIn_zN structure.

6. A method for fabricating a Al_xGa_yIn_zN structure comprising the steps of:

fabricating a Al_xGa_yIn_zN structure to a sacrificial growth substrate;

attaching a first mirror stack on top of a Al_xGa_yIn_zN structure;

wafer bonding a host substrate to the first mirror stack to create a wafer bond interface;

removing the sacrificial growth substrate; and

depositing electrical contacts to the Al_xGa_yIn_zN structure.

7. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 6, wherein the step for removing the sacrificial growth substrate comprises the step of laser melting.

8. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 6, further comprising the step of attaching an intermediate bonding layer at the wafer bond interface.

9. A method for fabricating an Al_xGa_yIn_zN structure, as defined in claim 6, wherein one of the host substrate and the intermediate bonding layer is selected to be compliant.

10. A method for fabricating a Al_xGa_yIn_zN structure, as defined in claim 6, further comprising the step of attaching a second mirror stack on top of the Al_xGa_yIn_zN structure.