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Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate

  • US 6,420,279 B1
  • Filed: 06/28/2001
  • Issued: 07/16/2002
  • Est. Priority Date: 06/28/2001
  • Status: Expired due to Term
First Claim
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1. A method of forming a high-k dielectric film on a substrate comprising the steps of:

  • a) providing a hydrogen passivated silicon surface on the semiconductor substrate within an atomic layer deposition chamber;

    b) heating the substrate to a temperature below 200°

    C.;

    c) introducing anhydrous hafnium nitrate into the chamber;

    d) purging the chamber with nitrogen or inert gas; and

    e) introducing a hydrating gas into the chamber, whereby a monolayer of hafnium oxide is deposited.

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