Display device including a transparent electrode pattern covering and extending along gate & source lines
First Claim
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1. A semiconductor device comprising:
- at least one thin film transistor formed over a substrate, said thin film transistor having an active layer comprising at least channel, source, and drain regions;
source and gate lines intersecting each other and connected to said thin film transistor, said source line overlapping with a contact portion in said source region of said thin film transistor; and
an electrode pattern covering and extending along said source and gate lines, said electrode pattern comprises a transparent material; and
a pixel electrode formed over said electrode pattern and connected to said drain region of said thin film transistor, ends of said pixel electrode overlapping said source and gate lines with the electrode pattern interposed therebetween.
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Abstract
The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.
108 Citations
31 Claims
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1. A semiconductor device comprising:
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at least one thin film transistor formed over a substrate, said thin film transistor having an active layer comprising at least channel, source, and drain regions;
source and gate lines intersecting each other and connected to said thin film transistor, said source line overlapping with a contact portion in said source region of said thin film transistor; and
an electrode pattern covering and extending along said source and gate lines, said electrode pattern comprises a transparent material; and
a pixel electrode formed over said electrode pattern and connected to said drain region of said thin film transistor, ends of said pixel electrode overlapping said source and gate lines with the electrode pattern interposed therebetween. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor display device comprising:
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at least one thin film transistor formed over a substrate, said thin film transistor having an active layer comprising al least channel, source, and drain regions;
source and gate lines intersecting each other and connected to said thin film transistor;
an electrode pattern covering and extending along said source and gate lines, said electrode pattern comprises a transparent material; and
a pixel electrode connected to said drain region of said thin film transistor, ends of said pixel electrode overlapping said source and gate lines with the electrode pattern interposed therebetween, wherein a contact portion in said source region does not overlap with said pixel electrode. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor display device comprising:
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at least one thin film transistor formed over a substrate, said thin film transistor having an active layer comprising at least channel, source, and drain regions;
source and gate lines intersecting each other and connected to said thin film transistor;
an electrode pattern covering and extending along said source and gate lines, said electrode pattern comprises a transparent material; and
a pixel electrode directly connected with said drain region, ends of said pixel electrode overlapping said source and gate lines with the electrode pattern interposed therebetween, wherein said electrode pattern covers an intersection of the source and gate lines. - View Dependent Claims (14, 15, 16, 17, 18)
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19. An active matrix type display device, comprising:
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at least one thin film transistor formed over a substrate;
source and gate lines intersecting each other and connected to said thin film transistor;
an electrode pattern covering and extending along said source and gate lines, said electrode pattern comprises a transparent material; and
a pixel electrode formed over said electrode pattern, ends of said pixel electrode overlapping said source and gate lines with said electrode pattern interposed therebetween, wherein said electrode pattern functions as a shield film for electrically shielding said source and gate lines from said pixel electrode. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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at least one thin film transistor formed over a substrate, said thin film transistor having an active layer comprising at least channel, source, and drain regions;
source and gate lines intersecting each other and connected to said thin film transistor, said source line overlapping with a contact portion in said source region of said thin film transistor; and
an electrode pattern extending along said source and gate lines, said electrode pattern comprising a first layer and a second layer; and
a pixel electrode formed over said electrodes and connected to said drain region of said thin film transistor, ends of said pixel electrode overlapping with said source and gate lines, wherein said first layer comprises metal and said second layer comprises a transparent material. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification