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Method for manufacturing semiconductor dynamic quantity sensor

  • US 6,423,563 B2
  • Filed: 05/22/2001
  • Issued: 07/23/2002
  • Est. Priority Date: 05/08/1998
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor dynamic quantity sensor, comprising steps of:

  • preparing a semiconductor substrate including a first semiconductor region and a second semiconductor region isolated from the first semiconductor region by an insulation film interposed therebetween; and

    forming a movable portion in the first semiconductor region by etching both the first semiconductor region and the second semiconductor region, wherein the movable portion is defined finally at a movable portion defining step that is carried out in a vapor phase atmosphere in the step of forming the movable portion.

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