Method of delaminating a thin film using non-thermal techniques

• US 6,423,614 B1
• Filed: 06/30/1998
• Issued: 07/23/2002
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Doyle, Brian S.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): MAI, ANH D
• Application Number:
  US09/107,398
• Time in Patent Office: 1,484 Days
• Field of Search: 438/455, 438/458
• US Class Current: 438/458
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body

Abstract

A method for forming an integrated circuit is provided. A semiconductor film is formed onto a first substrate. A metal film is formed onto a second substrate. The second substrate is bonded with the metal film onto the thin film of the first substrate. A first layer of transistors is formed onto the film. The second substrate is removed at a temperature within a low temperature range. The semiconductor film is bonded with the first layer of transistors onto a second layer of transistors of a third substrate.

Claims

1. A method for making an integrated circuit the method comprising:

a. forming a semiconductor film onto a first substrate;

b. forming a metal film onto a second substrate;

c. bonding said second substrate with said metal film onto said semiconductor film of said first substrate;

d. forming a first layer of active devices onto said semiconductor film;

e. removing said second substrate; and

f. bonding said semiconductor film with said first layer of active devices to a second layer of active devices of a third substrate.

2. The method of claim 1 wherein said semiconductor film is formed by way of ion implantation.

3. The method of claim 1 wherein said metal film includes a noble metal.

4. The method of claim 1 further including, after removing said second substrate, bonding a carrier wafer onto said first layer of active devices.

5. The method of claim 4 wherein said bonding of said semiconductor film with said layer of active devices includes placing said carrier wafer with said first layer of active devices onto said second layer of active devices of said third substrate.

6. The method of claim 5 wherein said bonding of said semiconductor film further includes aligning said first layer of active devices with said second layer of active devices.

7. The method of claim 1 wherein said removing said second substrate is performed by way of hydrogen annealing.

8. The method of claim 2 further including, after bonding said second substrate, removing said first substrate.

9. The method of claim 8 wherein said first substrate is removed by heating an assembly that includes said first substrate with said semiconductor film and said second substrate with said metal film.

10. The method of claim 1 wherein, before said bonding of said semiconductor film with said first layer of active devices to a second layer of active devices, a carrier wafer is bonded to said semiconductor film.

11. The method of claim 1 wherein after forming a semiconductor film onto a first substrate a first oxide film is formed on said semiconductor film.

12. The method of claim 1 wherein said metal film is formed onto second oxide film deposited onto said second semiconductor.

13. The method of claim 1 wherein said first layer of active devices is replaced by a patterned layer.