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Method of delaminating a thin film using non-thermal techniques

  • US 6,423,614 B1
  • Filed: 06/30/1998
  • Issued: 07/23/2002
  • Est. Priority Date: 06/30/1998
  • Status: Expired due to Term
First Claim
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1. A method for making an integrated circuit the method comprising:

  • a. forming a semiconductor film onto a first substrate;

    b. forming a metal film onto a second substrate;

    c. bonding said second substrate with said metal film onto said semiconductor film of said first substrate;

    d. forming a first layer of active devices onto said semiconductor film;

    e. removing said second substrate; and

    f. bonding said semiconductor film with said first layer of active devices to a second layer of active devices of a third substrate.

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