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Flash memory with ultra thin vertical body transistors

  • US 6,424,001 B1
  • Filed: 02/09/2001
  • Issued: 07/23/2002
  • Est. Priority Date: 02/09/2001
  • Status: Expired due to Term
First Claim
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1. A floating gate transistor, comprising:

  • a pillar extending outwardly from a semiconductor substrate, wherein the pillar includes a single crystalline first contact layer and a second contact layer vertically separated by an oxide layer;

    a single crystalline vertical transistor is formed along side of the pillar, wherein the single crystalline vertical transistor includes an ultra thin single crystalline vertical body region which separates an ultra thin single crystalline vertical first source/drain region and an ultra thin single crystalline vertical second source/drain region;

    a floating gate opposing the ultra thin single crystalline vertical body region; and

    a control gate separated from the floating gate by an insulator layer.

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