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Mixed memory integration with NVRAM, dram and sram cell structures on same substrate

  • US 6,424,011 B1
  • Filed: 08/31/1999
  • Issued: 07/23/2002
  • Est. Priority Date: 04/14/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device, comprising:

  • an NVRAM cell structure;

    a DRAM cell structure; and

    an SRAM cell structure;

    wherein said NVRAM cell structure, said DRAM cell structure, and said SRAM cell structure are on the same semiconductor-on-insulator substrate.

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