Mixed memory integration with NVRAM, dram and sram cell structures on same substrate
First Claim
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1. A semiconductor memory device, comprising:
- an NVRAM cell structure;
a DRAM cell structure; and
an SRAM cell structure;
wherein said NVRAM cell structure, said DRAM cell structure, and said SRAM cell structure are on the same semiconductor-on-insulator substrate.
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Abstract
A semiconductor memory device including an NVRAM cell structure, a DRAM cell structure and an SRAM cell structure. The NVRAM cell structure, the DRAM cell structure, and the SRAM cell structure are on the same semiconductor on insulator substrate. An NVRAM cell structure. Processes for forming a memory structure that includes NVRAM, DRAM, and/or SRAM memory structures on one semiconductor on insulator substrate and processes for forming a new NVRAM cell structure. Preferably, the semiconductor-on-insulator substrate is an SOI substrate, a silicon on glass substrate or a silicon on sapphire substrate, as appropriate for a particular application.
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Citations
9 Claims
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1. A semiconductor memory device, comprising:
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an NVRAM cell structure;
a DRAM cell structure; and
an SRAM cell structure;
wherein said NVRAM cell structure, said DRAM cell structure, and said SRAM cell structure are on the same semiconductor-on-insulator substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification