High performance packaging for microprocessors and DRAM chips which minimizes timing skews

• US 6,424,034 B1
• Filed: 08/31/1998
• Issued: 07/23/2002
• Est. Priority Date: 08/31/1998
• Status: Expired due to Term

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: Ahn, Kie Y., Forbes, Leonard, Farrar, Paul
• Primary Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US09/144,197
• Time in Patent Office: 1,422 Days
• Field of Search: 257/723, 257/777, 257/685, 257/686, 257/698
• US Class Current: 257/723
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A method and apparatus for packaging microprocessors and memory devices on a single silicon substrate is described. Microprocessors and memory devices are placed on both sides of the silicon substrate. Through holes are formed in the substrate to connect the microprocessor and memory devices together. By packaging the microprocessor and memory element this way, the propagation length between the memory and the microprocessors is shortened, and timing skews are minimized, and data transmission speed is increased. In addition, additional active and passive circuits and/or components can also be fabricated in one or both sides of the silicon substrate.

Claims

1. A chip carrier comprising:

a silicon substrate having a thickness less than 0.125 centimeters and with at least one circuit device formed within it, said at least one circuit device comprising at least one passive circuit; and

at least one integrated circuit chip attached to the substrate and electrically connected to said at least one circuit device.

2. The chip carrier of claim 1, wherein said at least one circuit device further comprises at least one active circuit device.

3. The chip carrier of claim 1, wherein said at least one integrated circuit chip is attached to the substrate by soldering.

4. The chip carrier of claim 1, wherein said silicon substrate has a first face and a second face which are opposite each other, conductive regions on said first and second faces being connected through the silicon substrate by conductive through holes.

5. The chip carrier of claim 1, wherein said at least one passive device comprises at least one of a resistor and a capacitor.

6. The chip carrier of claim 1, wherein said at least one integrated circuit chip comprises at least one logic chip attached to the substrate and at least one memory chip attached to the substrate.

7. The chip carrier of claim 1, wherein a bonding agent is located in the area between the said at least one integrated circuit chip and the substrate.

8. The chip carrier of claim 1, wherein said chip carrier is encapsulated.

9. The chip carrier of claim 2, wherein said at least one active circuit device comprises a phase locked loop circuit.

10. The chip carrier of claim 6, wherein said at least one logic chip is attached to a first face of the substrate and said at least one memory chip is attached to a second face of said substrate.

11. The chip carrier of claim 3, where the soldering comprises micro bump bonding.

12. The chip carrier of claim 4, wherein said at least one circuit device is an active circuit device formed in said first face.

13. The chip carrier of claim 6, wherein said at least one logic chip is a microprocessor.

14. The chip carrier of claim 12, wherein at least one passive circuit device is formed in said second face.

15. The chip carrier of claim 7, wherein said bonding agent is epoxy.

16. A processing system comprising:

a silicon substrate having a thickness less than 0.125 centimeters and having at least one circuit device formed therein;

a logic device attached to one side of the substrate; and

at least one memory device attached to an opposite side of the substrate and connected to said logic device through conductive through holes formed in said substrate.

17. The processing system of claim 16, wherein said at least one circuit device comprises at least one active circuit device.

18. The processing system of claim 16, wherein said at least one circuit device comprises at least one passive circuit device.

19. The processing system of claim 16, wherein said logic device is a microprocessor.

20. A chip carrier comprising:

a silicon substrate having at least one circuit device formed therein;

at least one integrated circuit chip attached to a first side of the substrate and electrically connected to said at least one circuit device; and

,

a microprocessor attached to a second side of the substrate, opposite to said first side, and electrically connected to said at least one integrated circuit chip and said at least one circuit device through at least one opening in said substrate.

21. A chip carrier comprising:

a silicon substrate;

at least one integrated circuit chip attached to each of a first and a second opposing sides of the substrate, wherein said integrated circuit chips are electrically connected through at least one opening in said substrate.

22. The chip carrier of claim 21, wherein each of the at least one integrated circuit chips are attached to the substrate by soldering.

23. The chip carrier of claim 21, wherein the at least one integrated circuit chip attached to the first side of the substrate comprises at least one logic chip, and the at least one integrated circuit chip attached to the second side of the substrate comprises at least one memory chip.

24. The chip carrier of claim 21, wherein the at least one integrated circuit chip attached to the first side of the substrate is attached with a first material which is different from a second material used to attach the at least one integrated circuit chip to the second side of the substrate.

25. The chip carrier of claim 21, further comprising at least one circuit device formed within the silicon substrate.

26. The chip carrier of claim 21, wherein conductive regions on said first and second opposing sides of the substrate are connected through the substrate by conductive through holes.

27. The chip carrier of claim 21, wherein a bonding agent is located in the area between the said at least one integrated circuit chips and the substrate.

28. The chip carrier of claim 22, where the soldering comprises micro bump bonding.

29. The chip carrier of claim 23, wherein the at least one logic chip is microprocessor.

30. The chip carrier of claim 24, wherein the first and second materials are solders having different thermal characteristics.

31. The chip carrier of claim 25, wherein the at least one circuit device comprises at least one active circuit device.

32. The chip carrier of claim 25, wherein said at least one circuit device comprises at least one passive circuit device.

33. The chip carrier of claim 25, wherein at least one circuit device is active circuit device formed in said first face.

34. The chip carrier of claim 25, wherein at least one passive circuit device is formed in said second face.

35. The chip carrier of claim 31, wherein said at least one active circuit device comprises a phase locked loop circuit.

36. The chip carrier of claim 32, wherein said at least one passive device comprises at least one of a resistor and a capacitor.

37. The chip carrier of claim 27, wherein said bonding agent is epoxy.