Method for fabricating micromachined members coupled for relative rotation
First Claim
1. A micromachining method for fabricating a torsional scanner that includes:
- a micromachined mirror having a mirror surface; and
a pair of hinges each having ends that are joined to the micromachined mirror, the hinges supporting said micromachined mirror for rotation about an axis;
the micromachining method for forming the torsional scanner comprising the steps of;
providing a wafer that has been formed from silicon material, and that has both a frontside and a backside;
forming a membrane in the wafer by etching a cavity in the silicon material of the backside of the wafer;
establishing a pattern that defines the mirror surface and the hinges on the frontside of the wafer at the membrane formed therein; and
forming in the frontside of the wafer the mirror surface and the hinges whereby the hinges support said micromachined mirror for rotation about the axis.
2 Assignments
0 Petitions
Accused Products
Abstract
A method for fabricating an integrated, micromachined structure, such as a torsional scanner, that includes a reference member, such as a frame, a pair of torsion hinges, and a dynamic member that is coupled to the reference member by the torsion hinges. The method includes providing a wafer that has been formed from silicon material, and that has both a frontside and a backside. A membrane is formed in the wafer by etching a cavity in the silicon material from the backside of the wafer. The method also includes establishing a pattern that defines the mirror surface and the torsion hinges on the frontside of the wafer at the membrane formed therein. The frontside of the wafer is processed to form therein the dynamic member and the torsion hinges that support the dynamic member for rotation about the axis.
-
Citations
69 Claims
-
1. A micromachining method for fabricating a torsional scanner that includes:
-
a micromachined mirror having a mirror surface; and
a pair of hinges each having ends that are joined to the micromachined mirror, the hinges supporting said micromachined mirror for rotation about an axis;
the micromachining method for forming the torsional scanner comprising the steps of;
providing a wafer that has been formed from silicon material, and that has both a frontside and a backside;
forming a membrane in the wafer by etching a cavity in the silicon material of the backside of the wafer;
establishing a pattern that defines the mirror surface and the hinges on the frontside of the wafer at the membrane formed therein; and
forming in the frontside of the wafer the mirror surface and the hinges whereby the hinges support said micromachined mirror for rotation about the axis. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A micromachining method for fabricating an integrated, micromachined structure that includes:
-
a reference member;
a pair of hinges projecting from said reference member;
a dynamic member that is coupled by said hinges to said reference member to be thereby supported from said reference member for rotation about an axis;
the micromachining method for forming the micromachined structure comprising the steps of;
providing a wafer that has been formed from silicon material, and that has both a frontside and a backside;
forming a membrane in the wafer by etching a cavity in the silicon material of the backside of the wafer;
establishing a pattern that defines the mirror surface and the hinges on the frontside of the wafer at the membrane formed therein; and
forming in the frontside of the wafer the dynamic member and the hinges whereby the hinges support said dynamic member for rotation about the axis. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for fabricating an integrated, micromachined structure that includes:
-
a reference member;
a pair of torsion hinges projecting from the reference member; and
a dynamic member that is coupled by the torsion hinges to the reference member to be thereby supported from the reference member for rotation about an axis with respect to the reference member;
the method for forming the micromachined structure comprising the steps of;
providing as starting material a first wafer having both a top layer and a base layer that are separated by an etch stop layer;
etching from a backside of the first wafer a cavity into the base layer which extends to the etch stop layer;
patterning the top layer to define the dynamic member, the torsion hinges and the reference member thereby exposing a region of the etch stop layer; and
removing at least enough of the exposed region of the etch stop layer so the dynamic member is supported from the reference member by the torsion hinges and is free to rotate about an axis with respect to the reference member. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
providing as starting material a second wafer;
forming a layer of etch resistant material on a frontside of the second wafer;
etching from a backside of the second wafer a cavity which extends through the second wafer to the etch stop layer to thereby establish with the second wafer the dust cover;
joining the dust cover to the micromachined structure.
-
-
61. The method of claim 60 wherein silicon nitride forms the layer of etch resistant material.
-
62. The method of claim 60 wherein silicon carbide forms the layer of etch resistant material.
-
63. The method of claim 60 wherein boron nitride forms the layer of etch resistant material.
-
64. The method of claim 60 wherein the dust cover is joined to the micromachined structure using anodic bonding.
-
65. The method of claim 60 wherein the dust cover is joined to the micromachined structure in a vacuum environment that the joined dust cover and micromachined structure thereafter maintain about the dynamic member.
-
66. The method of claim 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 2728, 29, 30, 31, 32, 33, 34, 35, 36, 37 or 38 wherein stress free material forms the top layer of the first wafer whereby the dynamic member, after patterning the top layer and being freed from the reference member by removing the etch stop layer to permit rotation about an axis with respect to the reference member, is flat.
-
67. The method of claim 21 or 22 wherein during pattering of the top layer the torsion hinges are oriented with respect to material forming the top layer for optimal shear stress and for near insensitivity to uniaxial strains.
-
68. The method of claim 67 wherein the top layer is n-type silicon and the torsion hinges are aligned in the <
- 110>
direction.
- 110>
-
69. The method of claim 67 wherein the top layer is p-type silicon and the torsion hinges are aligned in the <
- 100>
direction.
- 100>
Specification