Semiconductor device and method of manufacturing the same

• US 6,426,276 B1
• Filed: 11/09/2000
• Issued: 07/30/2002
• Est. Priority Date: 07/22/1997
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Shiba, Akiko, Agui, Tosiyuki, Ohnuma, Hideto
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): HOANG, QUOC DINH
• Application Number:
  US09/708,424
• Time in Patent Office: 628 Days
• Field of Search: 438/486, 438/149, 438/151, 438/153, 438/154, 438/162, 438/166, 438/471, 438/473, 438/476
• US Class Current: 438/476
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02491 Conductive materials
• CPC Class Codes: H01L 21/02496 Layer structure
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01L 21/02686 Pulsed laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/3226 of silicon on insulator
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

In a method of manufacturing a semiconductor device, nickel elements 404 is held on a surface of an amorphous silicon film 403 in a contact manner, and then transformed into a crystalline silicon film 405 through a heat treatment. Thereafter a mask 406 is formed to conduct doping with phosphorus. In this process, a region 407 is doped with phosphorus. Then, the region 407 which has been doped with phosphorus is activated by the irradiation of a laser beam or an intense light. Then, a heat treatment is conducted on the layer again to getter nickel in the region 407. Subsequently, the region 407 into which nickel is concentrated is removed so nickel is gettered, to obtain a region 408 having still higher crystallinity.

Claims

1. A method of manufacturing a semiconductor device, comprising:

forming an amorphous semiconductor film containing silicon therein on a substrate having an insulating surface;

introducing catalytic elements that promote the crystallization of said amorphous semiconductor film into said amorphous semiconductor film;

crystallizing said amorphous semiconductor film through a heat treatment;

selectively introducing gettering elements that enable said catalytic elements to be gettered into a semiconductor film obtained in said third step;

activating said gettering elements; and

gettering said catalytic elements through a heat treatment in a region into which the gettering elements are introduced in said fourth step,

wherein a temperature of said substrate does not exceed a strain point temperature of said substrate during the step of crystallizing said amorphous semiconductor film and during the step of gettering said catalytic elements.

2. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

introducing a gettering material into a portion of the crystallized semiconductor film;

irradiating the crystallized semiconductor film with a laser light after introducing said gettering material; and

then

gettering the metal element residing in the crystallized semiconductor film by said gettering material.

3. The method according to claim 2 wherein said gettering material is phosphorus.

4. The method according to claim 2 wherein said gettering material is a group 15 element.

5. The method according to claim 2 wherein said metal element is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

6. The method according to claim 2 wherein said metal element is selected from the group consisting of Ge, Pb and In.

7. The method according to claim 2 further comprising a step of removing said portion of the crystallized semiconductor film after gettering said metal element.

8. The method according to claim 2 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.

9. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

introducing a gettering material into a portion of the crystallized semiconductor film;

performing a rapid thermal annealing on the crystallized semiconductor film after introducing said gettering material; and

then

gettering the metal element residing in the crystallized semiconductor film by said gettering material.

10. The method according to claim 9 wherein said gettering material is phosphorus.

11. The method according to claim 9 wherein said gettering material is a group 15 element.

12. The method according to claim 9 wherein said metal element is selected from the group consisting of Ni, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

13. The method according to claim 9 wherein said metal element is selected from the group consisting of Ge, Pb and In.

14. The method according to claim 9 further comprising a step of removing said portion of the crystallized semiconductor film after gettering said metal element.

15. The method according to claim 9 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.

16. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

introducing phosphorus ions into source and drain regions of the crystallized semiconductor film;

irradiating the crystallized semiconductor film with a laser light after introducing said phosphorous ions; and

then

gettering the metal element residing in the crystallized semiconductor film by said source and drain regions.

17. The method according to claim 16 wherein said metal element is selected from the group consisting of Ni, Fe, Go, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

18. The method according to claim 16 wherein said metal element is selected from the group consisting of Ge, Pb and In.

19. The method according to claim 16 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.

20. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

introducing phosphorus ions into source and drain regions of the crystallized semiconductor film;

performing a rapid thermal annealing on the crystallized semiconductor film after introducing said phosphorous ions; and

then

gettering the metal element residing in the crystallized semiconductor film by said source and drain regions.

21. The method according to claim 20 wherein said metal element is selected from the group consisting of Ni, Fe, Ca, Ru, Rh, Pd, Qs, Ir, Pt, Cu and Au.

22. The method according to claim 20 wherein said metal element is selected from the group consisting of Ge, Pb and In.

23. The method according to claim 20 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.

24. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

providing the crystallized semiconductor film with a gettering material;

irradiating the crystallized semiconductor film with a laser light after providing said gettering material; and

then

gettering the metal element residing in the crystallized semiconductor film by said gettering material.

25. The method according to claim 24 wherein said gettering material comprises phosphorus.

26. The method according to claim 24 wherein said gettering material comprises a group 15 element.

27. The method according to claim 24 wherein said metal element is selected from the group consisting of Ni, Fe, Go, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

28. The method according to claim 25 wherein said metal element is selected from the group consisting of Ge, Pb and In.

29. The method according to claim 24 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.

30. A method of manufacturing a semiconductor device comprising the steps of:

forming an amorphous semiconductor film comprising silicon on an insulating surface;

providing said amorphous semiconductor film with a metal element;

heating said amorphous semiconductor film to crystallize said amorphous semiconductor film wherein the crystallization is promoted by said metal element;

providing the crystallized semiconductor film with a gettering material

performing a rapid thermal annealing on the crystallized semiconductor film after providing said gettering material; and

then

gettering the metal element residing in the crystallized semiconductor film by said gettering material.

31. The method according to claim 30 wherein said gettering material comprises phosphorus.

32. The method according to claim 30 wherein said gettering material comprises a group 15 element.

33. The method according to claim 30 wherein said metal element is selected from the group consisting of Ni, Fe, Go, Ru, Rh, Pd, Os, Ir, Pt, Cu and Au.

34. The method according to claim 30 wherein said metal element is selected from the group consisting of Ge, Pb and In.

35. The method according to claim 30 wherein said semiconductor device is selected from the group consisting of a portable information processing terminal, a head mount display, a car navigation device, a portable telephone, a video camera, and a projection type liquid crystal display device.