Semiconductor light-emitting device

• US 6,426,515 B2
• Filed: 03/30/2001
• Issued: 07/30/2002
• Est. Priority Date: 04/21/2000
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Yamamoto, Tsuyoshi, Kobayashi, Hirohiko, Ishikawa, Tsutomu, Shoji, Hajime
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Huynh, Andy
• Application Number:
  US09/820,929
• Publication Number:
  US 20010032976A1
• Time in Patent Office: 487 Days
• Field of Search: 257/14, 257/17, 257/79, 257/86, 257/80, 257/97, 257/98, 257/103, 438/22, 438/44, 372/45, 372/96
• US Class Current: 257/14
• CPC Class Codes: H01S 5/1228 DFB lasers with a complex coupled grating, e.g. gain or loss coupling

Abstract

In a semiconductor light-emitting device including an MQW diffraction grating structure mainly used in a gain-coupled DFB laser, the ratio of the gain coupling coefficient to the index coupling coefficient is increased by making each well layer in MQW-A thicker than that in MQW-B. Each well layer and each barrier layer in the MQW structure are made of different compositions of GaInAsP. This implements a semiconductor light-emitting device with high wavelength stability, which does not induce any mode hop even during modulation with high output power or even when external optical feedback is present.

Claims

1. A semiconductor light-emitting device including a multiple quantum well structure for amplifying a light by current injection, said structure comprising well layers and barrier layers interposed between said well layers, wherein

the number of well and barrier layers periodically changes in the light propagation direction in a partial or the whole region of said multiple quantum well structure,

said multiple quantum well structure comprises, in said region, first multiple quantum well layers divided in said light propagation direction at a period corresponding to an integral multiple of the half wavelength of a propagating light in a medium, and second flat multiple quantum well layers, and

at least one of the film characteristics and the film thickness of at least one of each barrier layer and each well layer in said first multiple quantum well layers is different from that in said second multiple quantum well layers.

2. The device according to claim 1, wherein periodic gain modulation exists in said light propagation direction and generates distributed feedback with respect to said propagating light.

3. The device according to claim 1, wherein periodic gain modulation and index modulation coexist in said light propagation direction, and both of said gain modulation and said index modulation generate distributed feedback with respect to said propagating light.

4. The device according to claim 1, wherein the difference in film characteristics is achieved by at least one of the measures of changing the material composition, of doping with p- or n-type impurities, and of introducing compressive or tensile strain.

5. The device according to claim 1, wherein each well layer in said second multiple quantum well layers is thinner than that in said first multiple quantum well layers.

6. The device according to claim 1, wherein the bandgap of each well layer in said second multiple quantum well layers is wider than that in said first multiple quantum well layers.

7. The device according to claim 1, wherein the barrier height of each barrier layer in said second multiple quantum well layers is higher than that in said first multiple quantum well layers.

8. The device according to claim 5, wherein the injected carrier density in said first multiple quantum well layers is higher than that in said second multiple quantum well layers.

9. The device according to claim 5, wherein no phase shift is contained in a region where periodic gain modulation or index modulation exists.

10. The device according to claim 1, wherein each well layer in said second multiple quantum well layers is thicker than that in said first multiple quantum well layers.

11. The device according to claim 1, wherein the bandgap of each well layer in said second multiple quantum well layers is narrower than that in said first multiple quantum well layers.

12. The device according to claim 1, wherein the barrier height of each barrier layer in said second multiple quantum well layers is lower than that in said first multiple quantum well layers.

13. The device according to claim 10, wherein the injected carrier density in said first multiple quantum well layers is lower than that in said second multiple quantum well layers.

14. The device according to claim 1, wherein the differential gain in said first multiple quantum well layers is lower than that in said second multiple quantum well layers.

15. The device according to claim 14, wherein the gain peak wavelength of said first multiple quantum well layers is shorter than the lasing wavelength, and the gain peak wavelength of said second multiple quantum well layers is longer than said lasing wavelength.

16. The device according to claim 15, wherein each well layer in said first multiple quantum well layers is thinner than that in said second multiple quantum well layers.

17. The device according to claim 15, wherein the composition wavelength of each well layer in said first multiple quantum well layers is shorter than that in said second multiple quantum well layers.

18. The device according to claim 15, wherein the barrier height of each barrier layer in said first multiple quantum well layers is higher than that in said second multiple quantum well layers.

19. The device according to claim 14, wherein tensile strain is introduced in said first multiple quantum well layers, and/or compressive strain is introduced in said second multiple quantum well layers.

20. The device according to claim 14, wherein at least one or more layers constituting said first multiple quantum well layers are doped with n-type impurities, and/or at least one or more layers constituting said second multiple quantum well layers are doped with p-type impurities.

21. The device according to claim 20, wherein an n-type substrate is used, and said first multiple quantum well layers are disposed under said second multiple quantum well layers.

22. The device according to claim 20, wherein a p-type substrate is used, and said first multiple quantum well layers are disposed over said second multiple quantum well layers.

23. The device according to claim 1, wherein strain is introduced in said first multiple quantum well layers, and the gain peak wavelengths of said first and second multiple quantum well layers are equal to each other.

24. The device according to claim 23, wherein compressive strain is introduced in said first multiple quantum well layers, and each well layer in said first multiple quantum well layers is thicker than that in said second multiple quantum well layers.

25. The device according to claim 1, wherein tensile strain is introduced in said first multiple quantum well layers, and each well layer in said first multiple quantum well layers is thinner than that in said second multiple quantum well layers.

26. The device according to claim 1, wherein compressive strain is introduced in said first multiple quantum well layers, and the composition wavelength of each well layer in said first multiple quantum well layers is longer than that in said second multiple quantum well layers.

27. The device according to claim 1, wherein tensile strain is introduced in said first multiple quantum well layers, and the composition wavelength of each well layer in said first multiple quantum well layers is shorter than that in said second multiple quantum well layers.

28. The device according to claim 1, wherein compressive strain is introduced in said first multiple quantum well layers, and the barrier height of each barrier layer in said first multiple quantum well layers is lower than that in said second multiple quantum well layers.

29. The device according to claim 1, wherein tensile strain is introduced in said first multiple quantum well layers, and the barrier height of each barrier layer in said first multiple quantum well layers is higher than that in said second multiple quantum well layers.

30. The device according to claim 1, wherein compressive strain is introduced in said first multiple quantum well layers, and the lattice constant in free space of the material of each well layer in said first multiple quantum well layers is smaller than that in said second multiple quantum well layers.

31. The device according to claim 1, wherein tensile strain is introduced in said first multiple quantum well layers, and the lattice constant in free space of the material of each well layer in said first multiple quantum well layers is greater than that in said second multiple quantum well layers.