Bolometric detector with intermediate electrical insulation and manufacturing process for this detector

• US 6,426,539 B1
• Filed: 06/28/2000
• Issued: 07/30/2002
• Est. Priority Date: 07/08/1999
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Vilain, Michel, Yon, Jean-Jacques
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Le, Bau T
• Application Number:
  US09/604,916
• Time in Patent Office: 762 Days
• Field of Search: 250/332, 250/338.4, 257/467, 257/258, 257/288, 257/448, 257/32, 257/425, 340/584
• US Class Current: 257/425
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

Bolometric detector with intermediate electrical insulation and manufacturing process for this detector.

According to the invention, at least two electrodes are formed facing the same face of a layer of bolometric material (5) and starting from the same layer of conducting material (8). Areas (8A, 8B) belonging to the two electrodes are electrically isolated from each other and electrically isolated from the layer of bolometric material, while other areas (7A, 7B) belonging to the two electrodes are separated from each other and are in electrical contact with this layer. The invention is particularly applicable to infrared imagery.

Claims

1. In a Bolometric detector having a layer of bolometric material and at least two electrodes formed facing the same face of this layer of bolometric material an improvement comprising:

each of the two electrodes including at least one first area and at least one second area, in that the second areas belonging to the two electrodes respectively are electrically insulated from each other and electrically insulated from the layer of bolometric material, and in that the first areas respectively belonging to the two electrodes are at a spacing from each other and are in electrical contact with this layer of bolometric material.

2. An improvement according to claim 1, further comprising a layer of electrically insulated material disposed intermediate said second area of said two electrodes and said bolometric material.

3. An improvement according to claim 2, wherein said electrically insulated material is chosen from the group comprising silicon nitride and silica.

4. An improvement according to claim 1, wherein said second areas are electrically insulated from the layer of bolometric material by a space in which there is no material.

5. An improvement according to claim 1, wherein said bolometric material is chosen from the group comprising amorphous silicon, vanadium oxides, amorphous SiGe and Si_xGe_yC_z where x≧

0, y≧

0, z≧

0 and x+y+z=1.

6. An improvement according to claim 1, wherein said electrically conducting material is titanium nitride.

7. An improvement according to claim 1, having a microbridge structure.

8. A bolometric detector according to claim 1, wherein said detector includes a matrix structure having at least two said bolometric detectors.