Method of manufacturing a semiconductor device with improved line width accuracy

• US 6,429,141 B1
• Filed: 06/08/2000
• Issued: 08/06/2002
• Est. Priority Date: 09/30/1998
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Van Ngo, Minh, Singh, Bhanwar, Hopper, Dawn, Morales, Carmen
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): LE, DUNG ANH
• Application Number:
  US09/589,105
• Time in Patent Office: 789 Days
• Field of Search: 438/723, 438/724, 438/725, 438/535, 438/636, 438/689, 430/312, 430/938, 430/318, 430/313, 430/311, 257/797, 257/750, 257/765
• US Class Current: 438/723
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region

Abstract

An oxide hard mask is formed during semiconductor device manufacturing between a deep ultraviolet photoresist and an anti-reflective coating to prevent interactions with the photoresist, thereby preventing reduction of a critical dimension of a patterned conductive layer. Embodiments include a method of manufacturing a semiconductor device comprising depositing a substantially nitrogen free oxide layer on the anti-reflective coating, such as a silicon oxide derived from tertaethyl orthosilicate by plasma enhanced chemical vapor deposition.

Claims

1. A method of manufacturing a semiconductor device, which method comprises:

forming a layer of a conductive material;

forming an anti-reflective coating on the conductive layer;

depositing an oxide film on the anti-reflective coating substantially free of basic components;

forming a layer of photoresist material on the oxide film; and

patterning the photoresist material to form a photoresist mask.

2. The method of claim 1, comprising depositing the oxide film on the anti-reflective coating to a thickness of no greater than about 350 Å

.

3. The method of claim 2, comprising depositing the oxide film by high-density plasma deposition of silicon oxide.

4. The method of claim 2, comprising depositing the oxide film by plasma enhanced chemical vapor deposition of an organosilicon compound.

5. The method of claim 4, comprising depositing the oxide film in a plurality of layers.

6. The method of claim 5, comprising depositing each layer at a thickness no greater than about 60 Å

.

7. The method of claim 2, further comprising etching the conductive layer, using the photoresist mask, to form a conductive feature having substantially vertical side surfaces.

8. The method of claim 1, wherein the basic components include nitrogen or nitrogen products.