Highly luminous light emitting device

• US 6,429,460 B1
• Filed: 09/28/2000
• Issued: 08/06/2002
• Est. Priority Date: 09/28/2000
• Status: Expired due to Term

• Current Assignee: Epistar Corporation
• Original Assignee: United Epitaxy Company (Epistar Corporation)
• Inventors: Chang, Chih-Sung, Chen, Tzer-Perng, Chiang, Chih-Li
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Huynh, Andy
• Application Number:
  US09/675,341
• Time in Patent Office: 677 Days
• Field of Search: 257/13, 257/94, 257/96, 257/98, 257/99, 257/79, 257/93, 257/103, 438/22
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention discloses a light emitting device which includes a substrate, a light emitting layer on the substrate, a current restriction layer on the light emitting layer, a current spreading layer on the current restriction layer, a dielectric layer on the current spreading layer defining an exposed area, a top ohmic contact metal layer on the exposed area, and a bottom ohmic contact metal layer under the substrate. The current spreading layer has a rough top surface. The current restriction layer includes a conductive layer that allows current to flow through, and an insulating layer around the conductive layer. The insulating layer prohibits the current from flowing through in a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer. The substrate is partially removed to form a cavity for avoiding substrate absorption. A highly luminous light emitting device is obtained by introductions of the rough top surface of the current spreading layer, partial removal of the substrate, the current restriction layer, and optimal layouts of the top and bottom ohmic contact metal layers and the conductive layer.

Claims

1. A light emitting device, comprising:

a substrate;

a light emitting layer on the substrate;

a current restriction layer on the light emitting layer, the current restriction layer comprising a conductive layer allowing current to flow through, and an insulating layer around the conductive layer;

a current spreading layer on the current restriction layer, the current spreading layer having a rough top surface;

a dielectric layer on the current spreading layer, defining an exposed area of the current spreading layer;

a top ohmic contact metal layer on the exposed area of the current spreading layer; and

a bottom ohmic contact metal layer under the substrate;

wherein the insulating layer prohibits the current from flowing through along a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer.

2. The light emitting device of claim 1, further comprising a bonding pad on the dielectric layer.

3. The light emitting device of claim 2, wherein the bonding pad extends over the current spreading layer to connect the top ohmic contact metal layer.

4. The light emitting device of claim 1, wherein the conductive layer is of a size substantially the same as the exposed area of the current spreading layer.

5. The light emitting device of claim 1, further comprising a lower metal layer under the bottom ohmic contact metal layer.

6. The light emitting device of claim 1, further comprising an etching stop layer between the light emitting layer and the substrate, a cavity substantially in the center of the substrate, and a lower metal layer;

wherein the cavity defines a surface and the lower metal layer is formed on the surface and under the bottom ohmic contact metal layer.

7. The light emitting device of claim 1, wherein the light emitting layer further comprises a lower confining layer, an upper confining layer, and an active layer sandwiched in between the lower confining layer and the upper confining layer.

8. A light emitting device, comprising:

a substrate;

a light emitting layer on the substrate;

a current restriction layer on the light emitting layer, the current restriction layer comprising a conductive layer allowing current to flow through, and an insulating layer around the conductive layer;

a current spreading layer on the current restriction layer, the current spreading layer having a rough top surface;

a top ohmic contact metal layer on one side of the current spreading layer; and

a bottom ohmic contact metal layer under the substrate;

wherein the insulating layer prohibits the current from flowing through along a path between the top ohmic contact metal layer and the bottom ohmic contact metal layer.

9. The light emitting device of claim 8, further comprising a lower metal layer under the bottom ohmic contact metal layer.

10. The light emitting device of claim 8, further comprising an etching stop layer between the light emitting layer and the substrate, a cavity substantially in the center of the substrate, and a lower metal layer;

wherein the bottom ohmic contact metal layer is on a side of the substrate opposite to the top ohmic contact metal layer, the cavity defines a surface, and the lower metal layer is formed on the surface and under the bottom ohmic contact metal layer.

11. The light emitting device of claim 8, wherein the light emitting layer further comprises a lower confining layer, an upper confining layer, and an active layer sandwiched in between the lower confining layer and the upper confining layer.