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Drive circuit for insulated gate type FETs

  • US 6,429,635 B2
  • Filed: 03/08/2001
  • Issued: 08/06/2002
  • Est. Priority Date: 03/10/2000
  • Status: Expired due to Fees
First Claim
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1. A drive circuit for use with an insulated gate type FET, comprising:

  • an oscillator circuit providing an oscillatory output;

    a charge pump circuit for boosting up a voltage input thereto in response to said oscillatory output of said oscillator circuit; and

    comparison means for comparing the output voltage of said charge pump circuit with a preset reference voltage and for outputting the result of the comparison;

    wherein said charge pump circuit includes;

    at least one charge pump unit, concatenated if more than one charge pump unit exist, each charge pump unit having a switch turned on/off by said oscillatory output of said oscillator circuit and a condenser connected between said switch and said oscillator circuit; and

    a charge pump unit in the output stage of the drive circuit having a switch turned on/off by said oscillatory output of said oscillator circuit and a condenser connected between said switch and a source of predetermined electrical potential; and

    wherein said charge pump unit in the output stage of the drive circuit is further concatenated with said at least one charge pump unit;

    wherein said charge pump circuit supplies said output voltage thereof to the gate of the FET; and

    wherein said comparison means controls stopping/starting of the oscillation of said oscillator circuit in accordance with the comparison.

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