Plasma reactor cooled ceiling with an array of thermally isolated plasma heated mini-gas distribution plates

• US 6,432,259 B1
• Filed: 12/14/1999
• Issued: 08/13/2002
• Est. Priority Date: 12/14/1999
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Carducci, Jim, Welch, Michael, Noorbakhsh, Hamid, Salimian, Siamak, Vaidya, Kaushik, Lee, Evans, Luscher, Paul, Shan, Hongching
• Primary Examiner(s): Mills, Gregory
• Assistant Examiner(s): HASSANZADEH, PARVIZ
• Application Number:
  US09/461,682
• Time in Patent Office: 973 Days
• Field of Search: 118/723.I, 118/723.E, 118/724, 118/715, 156/345.33, 156/345.34, 156/345.44
• US Class Current: 156/345.33
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32522 Temperature

Abstract

A plasma reactor embodying the invention includes a wafer support and a chamber enclosure member having an interior surface generally facing the wafer support. At least one miniature gas distribution plate for introducing a process gas into the reactor is supported on the chamber enclosure member and has an outlet surface which is a fraction of the area of the interior surface of said wafer support. A coolant system maintains the chamber enclosure member at a low temperature, and the miniature gas distribution plate is at least partially thermally insulated from the chamber enclosure member so that it is maintained at a higher temperature by plasma heating.

Claims

1. A plasma reactor for processing a semiconductor wafer, comprising:

a plasma source power applicator;

a wafer support;

a chamber enclosure member having an interior surface generally facing said wafer support;

at least one miniature gas distribution plate for introducing a process gas into said reactor and supported on said chamber enclosure member and having an outlet surface which is a fraction of the area of said wafer support;

said chamber enclosure member comprising coolant passages for maintaining said chamber enclosure member at a low temperature;

a thermally resistant element between said miniature gas distribution plate and said chamber enclosure member; and

wherein said at least one miniature gas distribution plate confronts said chamber enclosure member along an interface, said thermally resistant element being interposed substantially along said interface.

2. The reactor of claim 1 wherein said thermally resistant element has a sufficiently low heat conductance so that plasma heating can maintain said miniature gas distribution plate at a sufficiently high temperature to prevent accumulation of polymer.

3. The reactor of claim 1 wherein said cooling passages are sufficient to maintain said chamber enclosure at a temperature to inhibit flaking of accumulated polymer therefrom.

4. The apparatus of claim 1 wherein said gas distribution plate is of a sufficiently small size so that plasma heating thereof is capable of maintaining said gas distribution plate at a sufficiently high temperature to prevent accumulation of polymer thereon.

5. The apparatus of claim 1 wherein said miniature gas distribution plate comprises plural gas inlet holes having respective openings at said outlet surface.

6. The apparatus of claim 5 wherein said plural gas inlet holes extend through said miniature gas distribution plate, said chamber enclosure member comprising a process gas supply manifold in communication with said plural gas inlet holes.

7. The apparatus of claim 5 wherein said gas inlet holes are elongate and extend angularly with respect to a perpendicular direction to said outlet surface.

8. The apparatus of claim 7 wherein said inlet holes are angled relative to said outlet surface so as to provide respective spray patterns from said respective inlet holes which have a crossing pattern.

9. The apparatus of claim 8 wherein said outlet surface has a sufficiently small surface area so as to be contained within said gas turbulent region.

10. The apparatus of claim 7 wherein said inlet holes are angled relative to said outlet surface so as to provide respective spray patterns from said respective inlet holes which have a vortex pattern.

11. The apparatus of claim 7 wherein said inlet holes provide spray patterns which enhance gas turbulence in a gas turbulent region proximal said outlet surface.

12. The apparatus of claim 1 further a coolant source for circulating coolant within said passages.

13. The apparatus of claim 1 further comprising an array of miniature gas distribution plates on said chamber enclosure member.

14. The apparatus of claim 13 wherein said chamber enclosure member comprises a ceiling overlying said wafer support, said ceiling having a surface area exceeding the surface area of said wafer support, the outlet surface of each of said miniature gas distribution plates being of an area at least about one order of magnitude less than the surface area of said ceiling.

15. The apparatus of claim 14 further comprising plural holes in the interior surface of said ceiling within which respective ones of said miniature gas distribution plates are nested.

16. The apparatus of claim 15 wherein each of said miniature gas distribution plates protrudes from the respective hole so that the outlet surface of each of the gas distribution plates protrudes below the interior surface of said ceiling by a distance d.

17. The apparatus of claim 16 wherein the interior surface of said ceiling is waffled to provide better adhesion thereto of polymer accumulated thereon.

18. The apparatus of claim 16 wherein said distance d is on the order of a millimeter.

19. The apparatus of claim 18 wherein the diameter of each of said miniature gas distribution plates is on the order of less than 1 cm, while the diameter of said ceiling is on the order of about 25 cm.

20. The apparatus of claim 1 wherein the thermal mass of said miniature gas distribution plate is sufficiently small and the thermal insulation thereof is sufficiently great so that the plasma heating thereof maintains said miniature gas distribution plate above a polymer condensation temperature, while said cooling system is sufficient to maintain said ceiling below a polymer condensation temperature.

21. The apparatus of claim 1 wherein said outlet surface is generally facing a central processing region of said reactor.

22. The apparatus of claim 1 wherein said outlet surface comprises one of:

(1) a generally planar surface, or (2) a substantially U-shaped surface exposed to a processing chamber.

24. The reactor of claim 22 further comprising:

a source of a deposition precursor-containing process gas coupled to each of said miniature gas distribution plates, said process gas being a precursor of a deposition material having a condensation temperature;

wherein said miniature gas distribution plates are susceptible of being heated to a temperature above said condensation temperature by a plasma within chamber interior while permitting said ceiling to remain at a temperature below said condensation temperature.

25. The reactor of claim 24 further comprising waffling on the interior surface of said ceiling, said waffling being sufficient to promote adhesion of said deposition material on the ceiling interior surface.

26. The reactor of claim 25 wherein said waffling comprises plural bumps on said interior ceiling surface, said bumps having a typical height on the order of about 1 mm at a bump-to-bump spacing on the order of about 4 mm.

23. A plasma reactor comprising:

a chamber enclosure including a ceiling, said enclosure defining a chamber interior;

a wafer support within said chamber interior and underlying said ceiling;

a plasma source power applicator;

an array of plural miniature gas distribution plates on the interior side of said ceiling, each of said miniature gas distribution plates having an outlet surface facing said chamber interior with plural gas inlet holes for spraying respective streams of process gas into said chamber interior, said outlet surface having an area less than a fraction of the area of the interior of said ceiling; and

wherein said outlet surface is exposed to said chamber interior and generally facing a central region of said chamber interior such that the process gas is provided into the central region of the chamber interior.

27. The reactor of claim 23 wherein said gas inlet holes are angled relative to said outlet surface so as to enhance gas turbulence produced by said respective streams of process gas in the vicinity of said outlet surface.

28. The reactor of claim 27 wherein said gas inlet holes are angled so as to provide a crossing pattern of said respective streams.

29. The reactor of claim 27 wherein said gas inlet holes are angled so as to provide a vortex pattern of said respective streams.

30. The reactor of claim 23 further comprising a cooling system for cooling said ceiling.

31. The reactor of claim 30 wherein said cooling system is sufficient to maintain said ceiling below said condensation temperature.

32. The reactor of claim 31 wherein cooling system comprising coolant passages in said ceiling and a coolant source for supporting coolant flow through said coolant passages.

33. The reactor of claim 23 further comprising thermal insulation between each of said miniature gas distribution plates and said ceiling.

34. The reactor of claim 33 wherein said thermal insulation is sufficient to permit plasma heating of said miniature gas distribution plates above said condensation temperature while said ceiling is below said condensation temperature.

35. The reactor of claim 33 wherein said thermal insulation has a thermal resistance on the order of that of aluminum nitride.

36. The reactor of claim 33 wherein said thermally resistant element extends substantially along an interface between said chamber enclosure and each of said miniature gas distribution plates.

37. The reactor of claim 23 wherein said gas distribution plate is of a sufficiently small size so that it is susceptible of being heated above said condensation temperature by plasma heating.

38. The reactor of claim 23 wherein said gas distribution plate has a diameter of about 0.25 inch.

39. The reactor of claim 23 wherein said gas distribution plate protrudes beyond an interior surface of said chamber enclosure by a fraction of the thickness of said gas distribution plate.

40. The reactor of claim 39 wherein said fraction is on the order of about one-half.

41. The reactor of claim 23 wherein said outlet surface comprises one of:

(1) a generally planar surface, or (2) a substantially U-shaped surface exposed to said chamber interior.

42. A showerhead plug for mounting on an interior side of a plasma reactor chamber enclosure member, said plug comprising:

plural gas inlet holes for spraying a process gas into said reactor at an outlet surface of said showerhead plug;

said showerhead plug being of a small fraction of the size of said chamber enclosure member; and

wherein said showerhead plug is adapted so that said outlet surface is capable of being positioned exposed to and generally facing a central region of said reactor chamber such that the process gas is provided into the central region of the chamber interior.

43. The plug of claim 42 further comprising:

a thermally insulating material for thermally insulating at least said outlet surface from said chamber enclosure member.

44. The plug of claim 43 wherein said thermally resistant element is capable of extending substantially along an interface between said chamber enclosure member and said showerhead plug.

45. The plug of claim 42 wherein said chamber enclosure member comprises a reactor chamber ceiling.

46. The plug of claim 42 wherein said plural gas inlet holes are angled relative to said outlet surface to enhance gas turbulence in the vicinity of said outlet surface.

47. The plug of claim 46 wherein said plural gas inlet holed provide a vortex spray pattern.

48. The plug of claim 46 wherein said plural gas inlet holes provide a crossing spray pattern.

49. The plug of claim 42 wherein said plug comprises a showerhead body and thermal insulation between said body said ceiling.

50. The reactor of claim 49 wherein said thermal insulation is sufficient to permit plasma heating of said showerhead plug above a condensation temperature of a deposition precursor material contained in a process gas while said ceiling is below said condensation temperature.

51. The reactor of claim 50 wherein said showerhead plug is of a sufficiently small size so that it is susceptible of being heated above said condensation temperature by plasma heating.

52. The reactor of claim 49 wherein said thermal insulation has a thermal resistance on the order of that of aluminum nitride.

53. The reactor of claim 42 herein said gas distribution plate has a diameter of about 0.25 inch.

54. The reactor of claim 42 wherein said showerhead plug protrudes beyond an interior surface of said chamber enclosure by a fraction of the thickness of said showerhead plug.

55. The reactor of claim 54 wherein said showerhead plug protrudes beyond an interior surface of said chamber by about 0.2 inches to 0.3 inches.

56. The plug of claim 42 wherein said outlet surface comprises one of:

(1) a generally planar surface, or (2) a substantially U-shaped surface capable of being exposed to said plasma processing chamber interior.

57. A plasma reactor comprising:

a chamber enclosure including a ceiling, said enclosure defining a chamber interior;

a wafer support within said chamber interior and underlying said ceiling;

a plasma source power applicator;

an array of plural miniature gas distribution plates on the interior side of said ceiling, each of said miniature gas distribution plates having an outlet surface facing said chamber interior with plural gas inlet holes for spraying respective streams of process gas into said chamber interior, said outlet surface having an area less than a fraction of the area of the interior of said ceiling;

wherein said gas inlet holes are angled relative to said outlet surface so as to enhance gas turbulence produced by said respective streams of process gas in the vicinity of said outlet surface; and

wherein said gas inlet holes are angled so as to provide a crossing pattern of said respective streams.

58. A plasma reactor comprising:

a chamber enclosure including a ceiling, said enclosure defining a chamber interior;

a wafer support within said chamber interior and underlying said ceiling;

a plasma source power applicator;

an array of plural miniature gas distribution plates on the interior side of said ceiling, each of said miniature gas distribution plates having an outlet surface facing said chamber interior with plural gas inlet holes for spraying respective streams of process gas into said chamber interior, said outlet surface having an area less than a fraction of the area of the interior of said ceiling;

wherein said gas inlet holes are angled relative to said outlet surface so as to enhance gas turbulence produced by said respective streams of process gas in the vicinity of said outlet surface; and

wherein said gas inlet holes are angled so as to provide a vortex pattern of said respective streams.

59. A showerhead plug for mounting on an interior side of a plasma reactor chamber enclosure member, said plug comprising:

plural gas inlet holes for spraying a process gas into said reactor at an outlet surface of said showerhead plug;

said showerhead plug being of a small fraction of the size of said chamber enclosure member;

wherein said plural gas inlet holes are angled relative to said outlet surface to enhance gas turbulence in the vicinity of said outlet surface; and

wherein said plural gas inlet holes provide a vortex spray pattern.

60. A showerhead plug for mounting on an interior side of a plasma reactor chamber enclosure member, said plug comprising:

plural gas inlet holes for spraying a process gas into said reactor at an outlet surface of said showerhead plug;

said showerhead plug being of a small fraction of the size of said chamber enclosure member;

wherein said plural gas inlet holes are angled relative to said outlet surface to enhance gas turbulence in the vicinity of said outlet surface; and

wherein said plural gas inlet holes provide a crossing spray pattern.

61. A plasma reactor for processing a semiconductor wafer, the plasma reactor comprising:

a) a chamber enclosure member defining a processing chamber;

b) a plasma source power applicator capable of providing a plasma region within the processing chamber;

c) a wafer support within the processing chamber;

d) the chamber enclosure member being adapted to allow cooling of the enclosure member;

e) at least one showerhead plug embedded within the chamber enclosure member, the at least one showerhead plug comprising;

(1) an outlet surface confronting the plasma region, the outlet surface having an area less than a fraction of the area of the wafer support; and

(2) a plurality of gas distribution holes extending through the at least one showerhead plug to the outlet surface;

f) a thermally resistant element located substantially along an interface between the at least one showerhead plug and the chamber enclosure member; and

g) wherein the at least one showerhead plug and the thermally resistant element are configured so as to allow plasma heating of the showerhead plug to inhibit accumulation of deposits on the outlet surface while the enclosure member is cooled to promote accumulation of deposits on the enclosure member.

62. The plasma reactor of claim 61 wherein the plurality of gas distribution holes extend angularly with respect to a perpendicular direction to the outlet surface.

63. The plasma reactor of claim 62 wherein the plurality of gas distribution holes are angle relative to the outlet surface such that gas exiting from respective ones of the plurality of gas distribution holes is directed at others of the plurality of gas distribution holes.

64. The plasma reactor of claim 62 wherein the plurality of gas holes are angled relative to the outlet surface such that gas exiting from respective ones of the plurality of gas distribution holes is directed so as to be capable of generating a vortex.

65. The plasma reactor of claim 62 wherein the plurality of gas distribution holes are capable of providing spray patterns which enhance gas turbulence in a gas turbulent region proximal the outlet surface.

66. The plasma reactor of claim 65 wherein the outlet surface has a sufficiently small surface area so as to be contained within the gas turbulent region.

67. The plasma reactor of claim 61 wherein the chamber enclosure member comprises a process gas supply manifold in communication with the plurality of gas distribution holes.

68. The plasma reactor of claim 61 wherein the outlet surface is a generally planar surface.

69. The plasma reactor of claim 61 wherein the outlet surface is a substantially U-shaped surface.

70. The plasma reactor of claim 61 wherein the outlet surface is flush with an interior surface of the enclosure member.

71. The plasma reactor of claim 61 wherein the outlet surface protrudes below an interior surface of the enclosure member.

72. The plasma reactor of claim 71 wherein the outlet surface is generally facing a central portion of the processing chamber.

73. The plasma reactor of claim 71 wherein the outlet surface is generally facing a central portion of the processing chamber.

74. The plasma reactor of claim 61 wherein the thermally resistant element extends substantially along an interface between opposing surfaces of the chamber enclosure member and each of said miniature gas distribution plates.

75. The plasma reactor of claim 61 wherein the outlet surface is generally facing a central portion of the processing chamber.

76. A plasma reactor for processing a semiconductor wafer, the plasma reactor comprising:

a) a chamber enclosure member defining a processing chamber;

b) a plasma source power applicator capable of providing a plasma region within the processing chamber;

c) a wafer support within the processing chamber;

d) the chamber enclosure member being adapted to allow cooling of the enclosure member;

e) at least one showerhead plug embedded within the chamber enclosure member, the at least one showerhead plug comprising;

(1) an outlet surface confronting the plasma region;

(2) a plurality of gas distribution holes extending through the at least one showerhead plug to the outlet surface;

(3) wherein the outlet surface is limited in area so that the area is contained within a region in which turbulence from injected gas from the plurality of gas distribution holes inhibits accumulation of deposits thereon; and

(4) wherein the area of outlet surface is a fraction of the area of the wafer support;

f) a thermally resistant element located substantially along an interface between the at least one showerhead plug and the chamber enclosure member; and

g) wherein the at least one showerhead plug and the thermally resistant element are configured so as to allow plasma heating of the showerhead plug to inhibit accumulation of deposits on the outlet surface while the enclosure member is cooled to promote accumulation of deposits on the enclosure member.

77. The plasma reactor of claim 76 wherein the plurality of gas distribution holes extend angularly with respect to a perpendicular direction to the outlet surface.

78. The plasma reactor of claim 77 wherein the plurality of gas distribution holes are angled relative to the outlet surface such that gas exiting from respective ones of the plurality of gas distribution holes is directed at others of the plurality of gas distribution holes.

79. The plasma reactor of claim 76 wherein the plurality of gas distribution holes are angled relative to the outlet surface such that gas exiting from respective ones of the plurality of gas distribution holes is directed so as to be capable of generating a vortex.

80. The plasma reactor of claim 76 wherein the chamber enclosure member comprises a process gas supply manifold in communication with the plurality of gas distribution holes.

81. The plasma reactor of claim 76 wherein the outlet surface is a generally planar surface.

82. The plasma reactor of claim 76 wherein the outlet surface is a substantially U-shaped surface.

83. The plasma reactor of claim 76 wherein the outlet surface is flush with an interior surface of the enclosure member.

84. The plasma reactor of claim 76 wherein the outlet surface protrudes below an interior surface of the enclosure member.

85. The plasma reactor of claim 84 wherein the outlet surface is positioned generally facing a central region of the processing chamber.

86. The plasma reactor of claim 85 wherein each of the plurality of miniature gas distribution plugs confronts the chamber enclosure member along an interface, said thermally resistant element being interposed substantially along said interface.

87. The plasma reactor of claim 76 wherein each of the plurality of miniature gas distribution plugs confronts the chamber enclosure member along an interface, said thermally resistant element being interposed substantially along said interface.

88. The plasma reactor of claim 76 wherein the outlet surface is generally facing a central region of the processing chamber.

89. A plasma reactor comprising:

a) a chamber enclosure member defining a processing chamber;

b) a plasma source power applicator capable of providing a plasma region within the processing chamber;

c) a wafer support within the processing chamber;

d) the chamber enclosure member being adapted to allow cooling of the enclosure member;

e) an array of plural miniature gas distribution plates embedded within the chamber enclosure member, each of the miniature gas distribution plates comprising;

(1) an outlet surface confronting the chamber interior, the outlet surface having an area less than a fraction of the area of the chamber enclosure member; and

(2) a plurality of holes extending through each of the miniature gas distribution plugs to the outlet surface;

f) a thermally resistant element between each of the miniature gas distribution plugs and the chamber enclosure member; and

g) wherein the miniature gas distribution plugs and the thermally resistant elements are configured such that the thermally resistant element is located substantially along an interface between the chamber enclosure and the miniature gas distribution plugs so as to allow plasma heating of the miniature gas distribution plugs to inhibit accumulation of deposits on the outlet surface while the enclosure member is cooled to promote accumulation of deposits on the enclosure member.

90. The plasma reactor of claim 89 wherein the plurality of holes extend angularly with respect to a perpendicular direction to the outlet surface.

91. The plasma reactor of claim 90 wherein the plurality of holes are at least one of:

(a) angled relative to the outlet surface such that gas exiting from respective ones of the plurality of holes is directed at others of the plurality of holes, or (b) angled relative to the outlet surface such that gas exiting from respective ones of the plurality of holes is directed so as to be capable of generating a vortex.

92. The plasma reactor of claim 90 wherein the plurality of holes are capable of providing spray patterns which enhance gas turbulence in a gas turbulent region proximal the outlet surface, and wherein the outlet surface has a sufficiently small surface area so as to be contained within the gas turbulent region.

93. The plasma reactor of claim 89 wherein the chamber enclosure member comprises a process gas supply manifold in communication with the plurality of holes.

94. The plasma reactor of claim 89 wherein the outlet surface is a generally planar surface.

95. The plasma reactor of claim 89 herein the outlet surface is a substantially U-shaped surface.

96. The plasma reactor of claim 89 wherein the outlet surface is flush with an interior surface of the enclosure member.

97. The plasma reactor of claim 89 wherein the outlet surface protrudes below an interior surface of the enclosure member.

98. The plasma reactor of claim 97 wherein the outlet surface is generally facing a central region of the processing chamber.

99. The plasma reactor of claim 98 wherein each of the miniature gas distribution plugs confronts the chamber enclosure member along an interface, said thermally resistant element being interposed substantially along said interface.

100. The plasma reactor of claim 89 wherein each of the plurality of miniature gas distribution plugs confronts the chamber enclosure member along an interface, said thermally resistant element being interposed substantially along said interface.

101. The plasma reactor of claim 89 wherein the outlet surface is generally facing a central region of the processing chamber.