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Method of manufacturing semiconductor device

  • US 6,432,776 B1
  • Filed: 08/22/2000
  • Issued: 08/13/2002
  • Est. Priority Date: 08/23/1999
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming a section separator region in a semiconductor substrate to separate said semiconductor substrate into a first region and a second region;

    forming a first insulation film at said first region on said semiconductor substrate forming a first gate electrode material layer on said first insulation film;

    forming a second insulation film whose thickness differs from the thickness of said first insulation film over the exposed surface after said first gate electrode material layer is formed;

    forming a second gate electrode material layer on said second gate insulation film removing said second gate electrode material layer at said first region after said second gate electrode material layer is formed;

    forming a first gate electrode with said first gate electrode material layer at said first region after said second gate electrode material layer is removed, while forming a second gate electrode with said second gate electrode material layer at said second region;

    removing second insulation film remaining on said first gate electrode after said first and second gate electrodes are formed;

    forming first source/drain regions at said first region, and forming second source/drain regions at said second region, after said second insulation film is removed; and

    etching said first and second insulation films with masking by said first and second gate electrodes to form a first and second gate insulation films, after said first and second source/drain regions are formed.

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