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Method of improving electromigration resistance of capped Cu

  • US 6,432,822 B1
  • Filed: 05/02/2001
  • Issued: 08/13/2002
  • Est. Priority Date: 05/02/2001
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • treating a surface of copper (Cu) or Cu alloy layer with a plasma containing nitrogen (N2) and ammonia (NH3) in a chamber to reduce copper oxide on the surface at;

    an NH3 flow rate of about 210 to about 310 sccm; and

    a N2 flow rate of about 8,000 to about 9,200 sccm; and

    forming a capping layer on the treated surface of the Cu or Cu alloy layer.

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