Gas distribution apparatus for semiconductor processing

• US 6,432,831 B2
• Filed: 03/23/2001
• Issued: 08/13/2002
• Est. Priority Date: 06/30/1999
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Lenz, Eric, Dhindsa, Rajinder, Hao, Fangli
• Primary Examiner(s): Utech, Benjamin L.
• Assistant Examiner(s): Tran, Binh X.
• Application Number:
  US09/814,972
• Publication Number:
  US 20010027026A1
• Time in Patent Office: 508 Days
• Field of Search: 438/706, 438/711, 438/715, 438/729, 438/714, 438/731
• US Class Current: 438/710
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chamber therebetween. A baffle assembly including one or more baffle plates is located within the gas distribution chamber. The baffle arrangement includes a first gas supply supplying process gas to a central portion of the baffle chamber and a second gas supply supplying a second process gas to a peripheral region of the baffle chamber. Because the pressure of the gas is greater at locations closer to the outlets of the first and second gas supplies, the gas pressure at the backside of the showerhead can be made more uniform than in the case with a single gas supply. In one arrangement, the first and second gas supplies open into a plenum between a top baffle plate and a temperature controlled support member wherein the plenum is divided into the central and peripheral regions by an O-ring. In a second arrangement, the first gas supply opens into the central region above an upper baffle plate and the second gas supply opens into the periphery of a plenum between the upper baffle plate and a lower baffle plate.

Claims

1. A method of processing a substrate in a reaction chamber wherein a gas distribution system includes a support member defining a baffle chamber therein, the support member having a first gas supply opening into a central area of the baffle chamber and a second gas supply opening into a peripheral area of the baffle chamber, a baffle arrangement located in the baffle chamber such that gas from the first gas supply passes through first openings in baffle arrangement and gas from the second gas supply passes through second openings in the baffle arrangement, and a showerhead supported by the support member such that the gas passing through the first and second openings mixes together and passes through third openings in the showerhead, the method comprising:

supplying a semiconductor substrate to the reaction chamber;

supplying process gas to the first and second gas supplies such that the process gas flows through the baffle arrangement without mixing until the process gas passes through the baffle arrangement after which the mixed process gas passes through the showerhead and into an interior of the reaction chamber; and

processing the semiconductor substrate with the process gas passing through the showerhead.

2. The method of claim 1, wherein the semiconductor substrate comprises a silicon wafer and the method includes dry etching a dielectric, semiconductive or conductive layer of material on the wafer.

3. The method of claim 1, wherein the method includes depositing a layer of material on the semiconductor substrate.

4. The method of claim 1, wherein the showerhead comprises a showerhead electrode and the support member comprises a temperature-controlled member, the method including withdrawing heat from the showerhead electrode by passing coolant through the temperature-controlled member.

5. The method of claim 1, wherein the baffle arrangement includes upper and lower baffle plates, the second gas supply supplies gas to one or more gas flow channels located between the upper and lower baffle plates, the gas from the second gas supply flowing through the channels in a direction from an outer region of the baffle plates towards an inner region of the baffle plates.

6. The method of claim 1, further comprising adjusting flow rate and/or gas pressure of the process gas supplied to the first gas supply and adjusting flow rate and/or gas pressure of the process gas supplied to the second gas supply such that a desired gas pressure distribution is provided across the backside of the showerhead.

7. The method of claim 1, wherein the baffle arrangement includes upper and lower baffle plates, the method further comprising cooling the showerhead by withdrawing heat from the showerhead through contacting surfaces of the showerhead, the lower baffle plate, the upper baffle plate and/or the support member.

8. The method of claim 1, wherein the process gas flowing through the first gas supply has the same gas chemistry as the process gas flowing through the second gas supply.

9. The method of claim 1, wherein the process gas flowing through the first gas supply has a different gas chemistry than the process gas flowing through the second gas supply.

10. The method of claim 1, wherein the substrate is a semiconductor wafer which is etched in at least first and second steps, the process gas passing through the first gas supply being regulated relative to the process gas passing through the second gas supply to compensate for edge-fast and center-fast etch conditions during the first and second steps.

11. The method of claim 1, wherein the showerhead is a showerhead electrode which energizes the process gas passing therethrough into a plasma state.

12. The method of claim 11, further comprising etching a layer on the semiconductor substrate by supplying RF power to the showerhead electrode such that the process gas forms a plasma in contact with an exposed surface of the semiconductor substrate.

13. The method of claim 1, wherein the baffle arrangement includes upper and lower baffle plates, the gas passing through the first and second openings mixes in radially spaced apart annular gas flow channels located between the lower baffle plate and the showerhead.

14. The method of claim 13, wherein the channels are formed in a lower surface of the lower baffle plate and/or in an upper surface of the showerhead, the lower surface of the lower baffle plate being in contact with the upper surface of the showerhead such that heat is removed from the showerhead during processing of the semiconductor substrate.

15. The process of claim 1, wherein openings are etched through exposed portions of a dielectric layer of the substrate to an electrically conductive or semiconductive layer of the substrate.

16. The process of claim 15, wherein the etching step is carried out as part of a process of manufacturing a damascene structure.

17. The process of claim 15, wherein the semiconductor substrate includes layers of a photoresist masking layer, a first dielectric layer, a first stop layer, a second dielectric layer and a second stop layer, the etching step being carried out such that a trench patterned in the photoresist layer is etched through the first dielectric layer to the first stop layer during a first stage of the etching step and vias or contact openings are etched through the second dielectric layer to the second stop layer during a second stage of the etching step, the process gas supplied by the first and second gas supplies being adjusted such that the process gas composition and/or flow rates during the first stage is different from the process gas composition and/or flow rates during the second stage.