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Semiconductor device and method for manufacturing the same

  • US 6,432,845 B1
  • Filed: 11/23/1999
  • Issued: 08/13/2002
  • Est. Priority Date: 11/26/1998
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, the semiconductor device comprising a semiconductor substrate having a main surface, a plurality of wiring layers formed over the main surface, and a plurality of interlayer dielectric films formed over the main surface, wherein the plurality of interlayer dielectric films includes at least a first dielectric film and a second dielectric film, the method comprising at least the steps of:

  • (a) reacting a silicon compound with hydrogen peroxide by a CVD method to form the first dielectric film composed of a silicon oxide film having an internal tensile stress; and

    (b) forming the second dielectric film having an internal compression stress.

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