Microfabricated structures with trench-isolation using bonded-substrates and cavities

• US 6,433,401 B1
• Filed: 04/05/2000
• Issued: 08/13/2002
• Est. Priority Date: 04/06/1999
• Status: Expired due to Fees

• Current Assignee: Analog Devices IMI, Inc. (Analog Devices, Inc.)
• Original Assignee: Analog Devices IMI, Inc. (Analog Devices, Inc.)
• Inventors: Lemkin, Mark A., Juneau, Thor N., Clark, William A., Roessig, Allen W.
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Le, Bau T
• Application Number:
  US09/543,936
• Time in Patent Office: 860 Days
• Field of Search: 438/421, 438/424, 216/2, 257/776, 257/419, 257/524, 257/622, 257/510, 257/506, 257/244, 257/324, 174/253
• US Class Current: 257/524
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 2203/056 Rotation in a plane parallel to the substrate
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/036 Fusion bonding
• CPC Class Codes: B81C 2203/0742 Interleave, i.e. simultaneously forming the micromechanical structure and the CMOS circuit
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: H01G 5/18 due to change in inclination, e.g. by flexing, by spiral wrapping
• CPC Class Codes: H01G 5/40 Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations

Abstract

A microstructure and method for forming the microstructure are disclosed. The method includes: providing a handle substrate; providing a device substrate in which high-aspect-ratio structures and optional integrated circuitry will be fabricated; forming one or more filled isolation trenches within a recessed cavity on a first surface of the device substrate or alternatively forming one or more filled isolation trenches on a first surface of the device substrate and forming a recessed cavity on a first surface of the handle substrate; bonding the first surface of the device substrate to the first surface of the handle substrate; removing a substantially uniform amount of material from the second surface of the device substrate to expose at least one isolation trench; optionally forming circuits and interconnection on a second surface of the device substrate; and etching a set of features in the second surface of the device substrate to complete the definition of electrically isolated structural elements.

The micromechanical device includes: a device substrate having a first surface, a second surface, and a semiconductor layer; a handle substrate, the first surface of the device substrate bonded to the handle substrate; one or more first trenches formed in the device substrate, the first trenches extending from the second surface of the device substrate through the device substrate towards the handle substrate; a dielectric within the first trenches; one or more cavities disposed below the second surface of the device layer, a cavity enclosing a portion of at least one trench; at least one second trench formed in the second surface of the device substrate, the second trench completing definition of one or more micromechanical devices.

Claims

1. A micromechanical device comprising:

a device substrate having a first surface, a second surface, and a semiconductor layer;

a handle substrate having a first surface and a second surface, the first surface of the device substrate bonded to the first surface of the handle substrate;

at least a first trench formed in the device substrate, said at least first trench extending from the second surface of the device substrate through the device substrate towards the handle substrate;

a dielectric within the first trenches;

at least one cavity formed in at least one of said substrates and disposed below the second surface of the device substrate, said cavity enclosing at least a portion of said at least one first trench;

at least a second trench formed in the second surface of the device substrate, the at least second trench defining at least one micromechanical device.

2. The device of claim 1, further including:

a dielectric formed upon the second surface of the device substrate, the dielectric including at least one exposed contact region exposing the second surface of the device substrate;

at least one electrical conductor, the electrical conductor interconnecting at least one micromechanical device through said at least one contact region.

3. The device of claim 1, further including circuitry formed in the second surface of the device layer, the circuitry including at least one transistor.

4. The device of claim 2 wherein the electrical conductor defines an interconnection over at least one first trench.

5. The device of claim 1, additionally including circuitry formed upon a micromechanical structure defined by the second trench.

6. The device of claim 1 wherein the handle substrate comprises a wafer of material chosen from at least one of:

silicon, silicon dioxide on silicon, silicon nitride on silicon, quartz, glass, and aluminum oxide.

7. The device of claim 1 wherein the device substrate comprises a wafer of material chosen from at least one of:

undoped silicon, p-type silicon, n-type silicon, silicon having a thin layer of heavily p-doped silicon on the first surface of the device layer, and silicon having a thin layer of heavily n-doped silicon on the first surface of the device layer.

8. The device of claim 1 wherein the dielectric comprises a material chosen from at least one of:

deposited silicon dioxide, TEOS oxide, silicon nitride, phosphosilicate glass, arsenic glass, boron glass, boro-phosphosilicate glass, grown silicon dioxide.

9. The device of claim 1 wherein said at least one first trench extends into said at least second trench thereby forming a nubbin.

10. The device of claim 1 wherein said at least one first trench contains one or more condyles.

11. The device of claim 1 wherein the dielectric substantially fills said at least first trench.

12. The device of claim 1 further including a second material formed on the dielectric, the second material substantially filling each first trench.

13. The device of claim 12 wherein said second material includes polysilicon.

14. The device of claim 1, further including one or more studs.

15. The device of claim 1, wherein the cavity disposed below the second surface of the device layer is formed into the first surface of the device layer.

16. The device of claim 1, wherein the cavity disposed below the second surface of the device layer is formed into the first surface of the handle layer.

17. The device of claim 1 wherein the first surface of the device substrate is anodic-bonded to the first surface of the handle substrate.

18. The device of claim 1 wherein the first surface of the device substrate is fusion-bonded to the first surface of the handle substrate.

19. The device of claim 1 further including a layer of silicon dioxide at the bond interface between the first surface of the device substrate and the first surface of the handle substrate.

20. The device of claim 1 wherein said first trench is tapered toward said second surface.

21. A device, comprising:

a device wafer having a first surface and a second surface;

a handle wafer bonded to said device wafer at said first surface;

at least a first trench formed in the device substrate having a taper toward said second surface;

an insulator in said first trench;

at least one cavity formed in at least one of said wafers between said device wafer and said handle wafer; and

at least a second trench formed in said device wafer defining at least one micromechanical device.

22. The device of claim 21 wherein said insulator is silicon dioxide.

23. A device, comprising:

a device wafer having a first surface and a second surface;

a handle wafer having a first surface bonded to said device wafer device wafer at said first surface of said device wafer;

at least a first trench formed in the first surface of said device substrate and extending from said first surface through toward said second surface;

a silicon dioxide insulator substantially occupying said first trench;

at least one cavity formed in at least one of said wafers between said device wafer and said handle wafer; and

at least a second trench formed in said device wafer defining at least one micromechanical device.