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Method for creating thick oxide on the bottom surface of a trench structure in silicon

  • US 6,437,386 B1
  • Filed: 08/16/2000
  • Issued: 08/20/2002
  • Est. Priority Date: 08/16/2000
  • Status: Expired due to Term
First Claim
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1. A gate isolation structure of a semiconductor device, comprising:

  • a trench formed in a silicon substrate, said trench defined by sidewalls and a curved, non-flat bottom; and

    a dielectric layer formed on the sidewalls and bottom of the trench, said dielectric layer having a thickness transition region that smoothly tapers in thickness from a first thickness on the sidewalls of the trench to a second and greater thickness at the bottom of the trench.

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