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Structure and method for improved isolation in trench storage cells

  • US 6,437,401 B1
  • Filed: 04/03/2001
  • Issued: 08/20/2002
  • Est. Priority Date: 04/03/2001
  • Status: Expired due to Fees
First Claim
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1. Semiconductor apparatus comprising:

  • a semiconductor body defining a trench therein and being of a first conductivity type;

    first and second semiconductor regions of a second conductivity type that is opposite the first conductivity type, said regions being located within the semiconductor body and being separated by a portion of the semiconductor body;

    each of the first and second semiconductor regions having a section thereof which defines portions of a wall of the trench;

    a part of the portion of the semiconductor body between the first and second semiconductor regions defining a void which extends around the perimeter of the trench;

    the wall of the trench being lined with an insulating layer that separates the void from the trench and separates the second semiconductor region from the trench; and

    the trench being filled with a conductive material that contacts the section of the first semiconductor region that defines a portion of the wall of the trench.

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