Target and process for its production, and method for forming a film having a high refractive index
First Claim
Patent Images
1. A sputtering target comprising a substrate and a target material formed on the substrate, whereinthe target material comprises as a main component an oxygen deficient oxide;
- and the oxygen deficient oxide comprises a metal oxide of a chemical formula NbOx where 2<
x<
2.5, wherein the target material has a resistivity of at most 10 Ω
cm at room temperature.
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Abstract
A sputtering target comprising a substrate and a target material formed on the substrate, wherein the target material comprises a metal oxide of the chemical formula MOx as the main component, wherein MOx is a metal oxide which is deficient in oxygen as compared with the stoichiometric composition, and M is at least one metal selected from the group consisting of Ti, Nb, Ta, Mo, W, Zr and Hf, a process for its production, and a method for forming a film having a high refractive index.
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Citations
30 Claims
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1. A sputtering target comprising a substrate and a target material formed on the substrate, wherein
the target material comprises as a main component an oxygen deficient oxide; - and
the oxygen deficient oxide comprises a metal oxide of a chemical formula NbOx where 2<
x<
2.5, whereinthe target material has a resistivity of at most 10 Ω
cm at room temperature.- View Dependent Claims (2, 3, 4, 5)
- and
-
6. A method of making a sputtering target, the method comprising
forming a target material by plasma spraying a ceramic powder in a semi-molten state in a high temperature plasma gas in a reducing atmosphere onto a substrate, wherein the target material comprises as a main component an oxygen deficient oxide; - and
the oxygen deficient oxide comprises a metal oxide of a chemical formula NbOx where 2<
x<
2.5.- View Dependent Claims (7, 8, 9)
a layer having a thermal expansion coefficient intermediate between a thermal expansion coefficient of the target material and a thermal expansion coefficient of the substrate and a layer having a thermal expansion coefficient close to the thermal expansion coefficient of the target material. -
9. The method according to claim 7, wherein the plasma spraying is water plasma spraying.
- and
-
10. A method for forming a film, the method comprising sputtering a target, wherein
the sputtering target comprises a substrate and a target material formed on the substrate; -
the target material comprises as a main component an oxygen deficient oxide; and
the oxygen deficient oxide comprises a metal oxide of a chemical formula NbOx where 2<
x<
2.5.- View Dependent Claims (11, 12, 13, 14, 15)
-
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16. A sputtering target comprising
a substrate; -
a target material formed on the substrate; and
an undercoat of a metal or alloy between the target material and the substrate, wherein the target material comprises as a main component an oxygen deficient oxide; and
the oxygen deficient oxide comprises a metal oxide of a chemical formula NbOx where 2<
x<
2.5.- View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
a first layer, which is adjacent to the substrate and which has a thermal expansion coefficient between the thermal expansion coefficient of the target material and the thermal expansion coefficient of the substrate; - and
a second layer, which is adjacent to the target material and which has a thermal expansion coefficient within a range of ±
2×
10−
6/°
C. of a thermal expansion coefficient of the target material.
-
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22. The sputtering target according to claim 16, wherein the undercoat comprises a material selected from the group consisting of Mo, Ti, Ni, Nb, Ta, W, Ni—
- Al, Ni—
Cr, Ni—
Cr—
Al, Ni—
Cr—
Al—
Y and Ni—
Co—
Cr—
Al—
Y.
- Al, Ni—
-
23. The sputtering target according to 16, wherein the undercoat has a thickness of from 30 to 100 μ
- m.
-
24. The sputtering target according to claim 16, wherein the undercoat has a thermal expansion coefficient within a range of ±
- 2×
10−
6/°
C. of a thermal expansion coefficient of the target material.
- 2×
-
25. The sputtering target according to claim 24, wherein the thermal expansion coefficient of the undercoat is from 4×
- 10−
6 to 11×
10−
6/°
C.
- 10−
-
26. The sputtering target according to claim 16, wherein the target material has a thickness of from 2 to 10 mm.
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27. The sputtering target according to claim 16, wherein the target has a resistivity of at most 10 Ω
- cm.
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28. A method of making a sputtering target, the method comprising
providing an undercoat on a substrate; -
depositing a target material on the undercoat; and
forming the sputtering target of claim 16.
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29. The method of claim 28, wherein the depositing comprises plasma spraying.
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30. A method of using a sputtering target, the method comprising sputtering the sputtering target of claim 16.
Specification