Method of repairing a mask with high electron scattering and low electron absorption properties
First Claim
1. A method of repairing a defect of a mask used in a projection lithography system having a pattern with high electron scattering property and low electron absorption, comprising following steps:
- detecting a defect area in the pattern of manufactured mask;
supplying a gas comprising at least one compound material including halogen for use as an etching agent for silicon, said supplied gas including one of the following;
iodine, chlorine, xenon fluoride, carbon tetrachloride group, carbon trichloride group, carbon tetrafluoride group, or carbon trifluoride group;
said supplied gas being first diluted by an inert gas and then supplied to the vicinity of the defect area with an adjusted flow rate; and
irradiating a charged particle beam to said defect area.
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Accused Products
Abstract
A method to repair a scattering stencil type mask having a high electron beam scattering property and low electron absorption. In order to correct a defect caused at the time of manufacturing of the mask, which is being used when a reduction projection image is transferred onto a substrate and has a pattern projection portion comprising an electron beam scattering material, a repair membrane is formed in the defective portion of the mask by irradiating a charged particle beam to said defect while a gas including substances having high scattering properties are supplied to the close vicinity of the defective portion.
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Citations
19 Claims
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1. A method of repairing a defect of a mask used in a projection lithography system having a pattern with high electron scattering property and low electron absorption, comprising following steps:
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detecting a defect area in the pattern of manufactured mask;
supplying a gas comprising at least one compound material including halogen for use as an etching agent for silicon, said supplied gas including one of the following;
iodine, chlorine, xenon fluoride, carbon tetrachloride group, carbon trichloride group, carbon tetrafluoride group, or carbon trifluoride group;
said supplied gas being first diluted by an inert gas and then supplied to the vicinity of the defect area with an adjusted flow rate; and
irradiating a charged particle beam to said defect area.
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2. A method of repairing a defect of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, comprising following steps:
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detecting a defective portion in the pattern when transferred to a wafer; and
forming a membrane in the defective portion, the membrane composed of a material, main element of which is silicon or carbon, and including substances comprising at least one atom of nonmetal Vb group atoms and semiconductor atoms except silicon, a nonmetal atom and a metal atom. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A method of repairing a defective portion of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, by forming a membrane selectively in a defective portion, the method comprising following steps:
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detecting the defective portion;
supplying a plurality of gasified substances comprising electron beam scattering substances mixed at a predetermined mixture ratio to the vicinity of the defective portion individually; and
irradiating the charged particle beam to the defective portion. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method of repairing a defective portion of a mask used in projection lithography system, having a pattern with high electron scattering property and low electron absorption, by forming a membrane selectively in a defective portion, the method comprising following steps:
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detecting the defective portion;
forming in the defective portion a membrane composed of a substance, main element of which is carbon or silicon; and
forming a repair reinforcement layer on the membrane. - View Dependent Claims (17)
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18. A structure for repairing a defective portion of a mask used in projection lithography system, the mask having a pattern with high electron scattering property and low electron absorption, the structure comprising a membrane formed in the defective portion and composed of a material, a main element of which is silicon or carbon, comprising substances containing at least one atom of nonmetal Vb group atoms and semiconductor atoms except silicon, a nonmetal atom, and a metal atom in a defect portion.
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19. A structure for repairing a defective portion of a mask used in projection lithography system, the mask having a pattern with high electron scattering property and low electron absorption, the structure comprising;
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a membrane formed in the defective portion and composed of a substance main element of which is carbon or silicon; and
a repair reinforcement layer composed of substances containing semiconductor atoms except silicon, non-metal atoms, or metal atoms, and formed on the membrane.
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Specification