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Microfabrication using germanium-based release masks

  • US 6,440,766 B1
  • Filed: 07/07/2000
  • Issued: 08/27/2002
  • Est. Priority Date: 02/16/2000
  • Status: Expired due to Term
First Claim
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1. A method for forming released mechanical structures on the same substrate as protected regions, the method comprising the steps of:

  • (a) providing a substrate having protected regions, a first surface, and a sacrificial layer, said sacrificial layer including silicon dioxide;

    (b) depositing a protective layer including germanium onto said first surface;

    (c) photolithographically defining a release region in said protective layer where a mechanical structure will be released;

    (d) removing portions of said protective layer including germanium at said release regions defined in said step (c), leaving remaining portions;

    (e) releasing a microstructure by etching at least a portion of the sacrificial layer using an etchant including hydrogen fluoride; and

    (f) removing remaining portions of said protective layer including germanium.

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