Method of manufacturing semiconductor device with sidewall metal layers

• US 6,440,822 B1
• Filed: 07/09/2001
• Issued: 08/27/2002
• Est. Priority Date: 07/10/2000
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Ohno, Yasuo, Takahashi, Yuji, Miyamoto, Hironobu, Kasahara, Kensuke, Nakayama, Tatsuo, Ando, Yuji, Hayama, Nobuyuki, Kunihiro, Kazuaki, Kuzuhara, Masaaki, Matsunaga, Kouji
• Primary Examiner(s): DANG, TRUNG Q
• Application Number:
  US09/901,424
• Publication Number:
  US 20020048889A1
• Time in Patent Office: 414 Days
• Field of Search: 438/113, 438/114, 438/122, 438/118, 438/460, 438/462
• US Class Current: 438/462
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

In a method of manufacturing a semiconductor device, trench sections are formed on a side of one of opposing surface portions of a substrate. At lest a part of each of the trench sections is covered by a power supply metal layer which is formed on the one surface portion of the substrate. The substrate is fixed to a support such that the one surface of the substrate fits to the support. A chip is separated from the substrate using the trench sections. A conductive film is formed on side surface portions of the chip and the other surface portion of the chip. Then, the chip is separated from the support.

Claims

1. A method of manufacturing a semiconductor device comprising the steps of:

(a) forming trench sections on a side of one of opposing surface portions of a substrate, wherein at least part of each of said trench sections is covered by a power supply metal which is formed on said one surface portion of said substrate;

(b) fixing said substrate to a support such that said one surface of said substrate fits to said support;

(c) separating a chip from said substrate using said trench sections;

(d) forming a conductive film on side surface portions of said chip and the other surface portion of said chip; and

(e) separating said chip from said support.

2. The method according to claim 1, wherein said (a) forming step comprises the step of:

cutting said surface portion of said substrate to form said trench sections.

3. The method according to claim 2, wherein said (c) separating step comprises the step of:

cutting said substrate from the other surface portion of said substrate to said trench section.

4. The method according to claim 2, wherein said (c) separating step comprises the steps of:

grinding the other surface portion of said substrate; and

cutting said grinded substrate from the other surface portion to said trench section.

5. The method according to claim 1, wherein said (a) forming step comprises the step of:

cutting said one surface portion of said substrate to form first trench portions;

forming said power supply metal to cover said one surface portion of said substrate and a surface of each of said first trench portions; and

cutting said first trench portions to form second trench sections so that said trench sections are formed.

6. The method according to claim 5, wherein said (c) separating step comprises the step of:

grinding the other surface portion of said substrate such that said second trench portions are exposed.

7. The method according to claim 1, wherein said (a) forming step comprises the step of:

forming a peripheral film in a peripheral portion of said chip on said one surface portion of said substrate to form said trench sections.

8. The method according to claim 7, wherein said (c) separating step comprises the step of:

cutting said substrate from the other surface portion of said substrate to said trench sections.

9. The method according to claim 7, wherein said (c) separating step comprises the steps of:

grinding the other surface portion of said substrate; and

cutting said grinded substrate from the other surface portion of said substrate to said trench section.

10. The method according to claim 1, wherein said (a) forming step comprises the step of:

forming a peripheral film in a peripheral portion of said chip on said one surface portion of said substrate to form first trench portions;

forming said power supply metal to cover said one surface portion of said substrate and a surface of each of said first trench portions; and

cutting said first trench portions to form second trench sections so that said trench sections are formed.

11. The method according to claim 10, wherein said (c) separating step comprises the step of:

grinding the other surface portion of said substrate such that said second trench portions are exposed.

12. The method according to claim 1, wherein said (b) fixing step further comprises the step of:

filling a material soluble to a solvent in said trench section.

13. The method according to claim 1, wherein said conductive film includes a first conductive film and a second conductive film, and

said (d) forming step comprises the steps of:

(f) forming said first conductive film on side surface portions of said chip and the other surface portion of said chip; and

(g) forming said second conductive film on said first conductive film.

14. The method according to claim 13, wherein said first conductive film is formed by a sputtering method or a vapor deposition method.

15. The method according to claim 13, wherein said second conductive film is formed by a plating method.