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Semiconductor integrated system

  • US 6,441,399 B1
  • Filed: 01/13/1999
  • Issued: 08/27/2002
  • Est. Priority Date: 04/22/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a plurality of first thin film transistors for switching pixels formed over a substrate having an insulating surface;

    a driver circuit comprising a plurality of second thin film transistors formed over said substrate for driving said first thin film transistors, each of said first and second thin film transistors having a channel forming region comprising crystalline silicon;

    an interlayer insulating film formed over said first thin film transistors and said second thin film transistors;

    a plurality of pixel electrodes formed on said interlayer insulating film and electrically connected to said first thin film transistors at one of source or drain thereof;

    a plurality of wirings formed on said interlayer insulating film and electrically connected to said first thin film transistors at the other one of the source or drain thereof, wherein all of said first and second thin film transistors are p-channel type thin film transistors.

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