Power semiconductor component for high reverse voltages

• US 6,441,408 B2
• Filed: 01/17/2001
• Issued: 08/27/2002
• Est. Priority Date: 07/17/1998
• Status: Expired due to Term

• Current Assignee: Siemens AG
• Original Assignee: Infineon Technologies AG
• Inventors: Schulze, Hans-Joachim, Strack, Helmut, Mauder, Anton, Bauer, Josef, Barthelmess, Reiner, Brunner, Heinrich, Porst, Alfred
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US09/761,241
• Publication Number:
  US 20010005036A1
• Time in Patent Office: 587 Days
• Field of Search: 257/139, 257/147, 257/341, 257/104, 257/103, 257/175, 257/140, 257/146
• US Class Current: 257/139
• CPC Class Codes: H01L 29/1016 Anode base regions of thyristors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7455 produced by an insulated gate structure
• CPC Class Codes: H01L 29/749 with turn-on by field effect

Abstract

A power semiconductor components has stop zones. In order to optimize the static and dynamic losses of the power semiconductor components, the stop zone is provided with donors which have at least one donor level which lies within the band gap of silicon and is at least 200 meV away from the conduction band edge of silicon.

Claims

1. A power semiconductor component, comprising:

an n-doped silicon layer;

a first main area and a second main area;

a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;

said doped layers, as seen from said second main area, including a p-doped anode zone and an n-doped stop layer adjoining said p-doped anode zone;

said n-doped silicon layer having a first dopant concentration, said n-doped stop layer having a second dopant concentration higher than said first dopant concentration, said n-doped stop layer adjoining and completely covering said n-doped silicon layer;

said n-doped stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;

a cathode assigned to said first main area and formed by a first metallization layer; and

an anode formed by a second metallization layer covering said second main area.

2. The power semiconductor component according to claim 1, wherein said at least one dopant is selenium.

3. The power semiconductor component according to claim 1, wherein said at least one dopant is sulfur.

4. The power semiconductor component according to claim 1, wherein said at least one dopant includes selenium and sulfur.

5. The power semiconductor component according to claim 1, wherein said second dopant concentration is between 5×

10¹⁴ cm<sup>−

3</sup> and 5×

10¹⁵ cm<sup>−

3</sup>.

6. The power semiconductor component according to claim 1, wherein said n-doped stop layer has a depth of between 1 μ

m and 50 μ

m.

7. The power semiconductor component according to claim 1, wherein said n-doped stop layer has a depth of between 10 μ

m and 25 μ

m.

8. The power semiconductor component according to claim 1, wherein said p-doped anode zone is embodied as a transparent emitter with a given depth and a given dopant concentration selected such that at least 50% of a total current flowing through said transparent emitter is carried by electrons.

9. The power semiconductor component according to claim 8, wherein said given depth of said transparent emitter is between 0.5 μ

m and 5 μ

m.

10. The power semiconductor component according to claim 1, including:

a plurality of IGBT cells including p-doped base zones and n-doped source zones being introduced from said first main area;

said cathode being electrically conductively connected to said p-doped base zones and said n-doped source zones;

a gate electrode provided above said first main area and between respective two of said IGBT cells; and

an insulator insulating said gate electrode.

11. The power semiconductor component according to claim 1, including:

a p-doped base introduced from said first main area;

a plurality of n-doped cathode zones introduced into said p-doped base; and

said n-doped cathode zones being electrically conductively connected to said cathode.

12. The power semiconductor component according to claim 1, including:

a plurality of MCT structures each including a p-type base, an n-type emitter, a channel region and a p-type short region,

said MCT structures being introduced from said first main area; and

a gate electrode disposed insulated above said first main area and between respective two of said MCT structures.

13. A power semiconductor component, comprising:

an n-doped silicon layer;

a first main area and a second main area;

a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;

said doped layers, as seen from said second main area, including an anode zone, said n-doped silicon layer adjoining said anode zone, a stop layer adjoining said n-doped silicon layer, and an n-doped cathode zone adjoining said stop layer;

said n-doped silicon layer having a first dopant concentration, said stop layer having a second dopant concentration higher than said first dopant concentration, said stop layer completely covering said n-doped silicon layer;

said stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;

a cathode assigned to said first main area and formed by a first metallization layer; and

an anode formed by a second metallization layer covering said second main area.

14. The power semiconductor component according to claim 13, wherein said at least one dopant is selenium.

15. The power semiconductor component according to claim 13, wherein said at least one dopant is sulfur.

16. The power semiconductor component according to claim 13, wherein said at least one dopant includes selenium and sulfur.

17. The power semiconductor component according to claim 13, wherein said second dopant concentration is between 5×

10¹⁴ cm<sup>−

3</sup> and 5×

10¹⁵ cm<sup>−

3</sup>.

18. The power semiconductor component according to claim 13, wherein said stop layer has a depth of between 1 μ

m and 50 μ

m.

19. The power semiconductor component according to claim 13, wherein said stop layer has a depth of between 10 μ

m and 25 μ

m.

20. The power semiconductor component according to claim 13, wherein said stop layer has a depth of between 15 μ

m and 35 μ

m.

21. The power semiconductor component according to claim 13, wherein said anode zone is embodied as a transparent emitter with a given depth and a given dopant concentration selected such that at least 50% of a total current flowing through said transparent emitter is carried by electrons.

22. The power semiconductor component according to claim 21, wherein said given depth of said transparent emitter is between 0.5 μ

m and 5 μ

m.

23. The power semiconductor component according to claim 13, wherein said anode zone is embodied as a p-doped anode emitter.

24. The power semiconductor component according to claim 13, including an anode emitter embodied as a Schottky metallization.

25. A semiconductor component, comprising:

a MISFET having a source, a drain, and a parasitic diode;

said parasitic diode being reverse-connected in parallel from said source to said drain and said parasitic diode including;

an n-doped silicon layer;

a first main area and a second main area;

a plurality of doped layers introduced into said n-doped silicon layer between said first main area and said second main area;

said doped layers, as seen from said second main area, including an anode zone, said n-doped silicon layer adjoining said anode zone, and a stop layer adjoining said n-doped silicon layer;

said n-doped silicon layer having a first dopant concentration, said stop layer having a second dopant concentration higher than said first dopant concentration, said stop layer completely covering said n-doped silicon layer;

said stop layer being doped with at least one dopant having at least one donor level between a valence band edge of silicon and a conduction band edge of silicon and the at least one donor level being more than 200 meV away from the conduction band edge of silicon, to form said n-doped stop layer non-epitaxially and without lengthy deep diffusion;

a cathode assigned to said first main area and formed by a first metallization layer; and

an anode formed by a second metallization layer covering said second main area.