Inductive load driving circuit

• US 6,441,654 B1
• Filed: 09/06/2000
• Issued: 08/27/2002
• Est. Priority Date: 09/08/1999
• Status: Expired due to Term

• Current Assignee: ROHM Co., Ltd.
• Original Assignee: ROHM Co., Ltd.
• Inventors: Yamamoto, Seiichi
• Primary Examiner(s): Cunningham, Terry D.
• Assistant Examiner(s): NGUYEN, LONG T
• Application Number:
  US09/656,405
• Time in Patent Office: 720 Days
• Field of Search: 327/110, 327/423, 327/424, 327/448, 327/588, 327/427, 327/434, 327/436, 327/478, 327/482, 257/544, 257/547, 257/484
• US Class Current: 327/110
• CPC Class Codes: H01L 27/0623 in combination with bipolar transistors
• CPC Class Codes: H01L 29/7302 structurally associated with other devices assemblies of devices H01L25/00; integrated circuits H01L27/00; IGBT H01L29/7393
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor

Abstract

An inductive load driving circuit, formed in an integrated circuit device, includes first, second, third, and fourth switching transistors, and a guardring. The first switching transistor is connected between a first power supply potential point and a first output terminal. The second switching transistor is connected between the first power supply potential point and a second output terminal. The third switching transistor is connected between the first output terminal and a second power supply potential point. The fourth switching transistor is connected between the second output terminal and the second power supply potential point. One of the third switching transistor and the fourth switching transistor is turned on or off depending on a power supply direction in which power is supplied to an inductive load connected between the first output terminal and the second output terminal. The first switching transistor or the second switching transistor is controllably turned on and off, to thereby supply an adjusted power in a forward direction or in an inverse direction to the inductive load. The guardring of an N-type semiconductor region is connected to the second power supply potential point.

Claims

1. An inductive load driving circuit formed in an integrated circuit device, the inductive load driving circuit comprising:

a first switching transistor connected between a first power supply potential point and a first output terminal;

a second switching transistor connected between the first power supply potential point and a second output terminal;

a third switching transistor connected between the first output terminal and a second power supply potential point;

a fourth switching transistor connected between the second output terminal and the second power supply potential point, wherein

one of the third switching transistor and the fourth switching transistor is turned on or off depending on a power supply direction in which power is supplied to an inductive load connected between the first output terminal and the second output terminal, and the first switching transistor or the second switching transistor is controllably turned on and off, to thereby supply an adjusted power in a forward direction or in an inverse direction to the inductive load; and

a guardring of an N-type semiconductor region provided for at least one of the third switching transistor and the fourth switching transistor, the guardring being connected to the second power supply potential point.

2. The inductive load driving circuit according to claim 1, wherein each of the third switching transistor and the fourth switching transistor is an N-channel MOSFET having a back gate region and a drain region where the N-channel MOSFET is formed in a P-type semiconductor substrate.

3. The inductive load driving circuit according to claim 1, wherein each of the third switching transistor and the fourth switching transistor is an N-channel DMOSFET having a drain region where the N-channel DMOSFET is formed in an N-type diffusion layer provided in a P-type semiconductor substrate.

4. The inductive load driving circuit according to claim 1, wherein each of the third switching transistor and the fourth switching transistor is an NPN-type bipolar transistor formed in an N-type diffusion layer provided in a P-type semiconductor substrate.

5. The inductive load driving circuit according to claim 1, wherein the guardring is disposed only around the third switching transistor or the fourth switching transistor.

6. The inductive load driving circuit according to claim 1, wherein the guardring is disposed only around the third switching transistor and the fourth switching transistor.

7. The inductive load driving circuit according to claim 2, wherein the back gate region is disposed between the drain region and the guardring.

8. The inductive load driving circuit according to claim 3, further comprising a P-type isolation region disposed between the drain region and the guardring.

9. An inductive load driving circuit formed in an integrated circuit device, the inductive load driving circuit comprising:

a first switching transistor connected between a first power supply potential point and a first output terminal;

a second switching transistor connected between the first power supply potential point and a second output terminal;

a third switching transistor connected between the first output terminal and a second power supply potential point;

a fourth switching transistor connected between the second output terminal and the second power supply potential point, wherein

one of the third switching transistor and the fourth switching transistor is turned on or off depending on a power supply direction in which power is supplied to an inductive load connected between the first output terminal and the second output terminal, and the first switching transistor or the second switching transistor is controllably turned on and off, to thereby supply an adjusted power in a forward direction or in an inverse direction to the inductive load; and

a guardring of an N-type semiconductor region disposed only around the third switching transistor or the fourth switching transistor, the guardring being connected to the second power supply potential point.

10. The inductive load driving circuit according to claim 9, wherein each of the third switching transistor and the fourth switching transistor is an N-channel MOSFET having a back gate region and a drain region where the N-channel MOSFET is formed in a P-type semiconductor substrate.

11. The inductive load driving circuit according to claim 10, wherein the back gate region is disposed between the drain region and the guardring.

12. The inductive load driving circuit according to claim 9, wherein each of the third switching transistor and the fourth switching transistor is an N-channel DMOSFET having a drain region where the N-channel DMOSFET is formed in an N-type diffusion layer provided in a P-type semiconductor substrate.

13. The inductive load driving circuit according to claim 12, further comprising a P-type isolation region disposed between the drain region and the guardring.

14. The inductive load driving circuit according to claim 9, wherein each of the third switching transistor and the fourth switching transistor is an NPN-type bipolar transistor formed in an N-type diffusion layer provided in a P-type semiconductor substrate.

15. An integrated circuit device having an inductive load driving circuit, the inductive load driving circuit comprising:

a first switching transistor connected between a first power supply potential point and a first output terminal;

a second switching transistor connected between the first power supply potential point and a second output terminal;

a third switching transistor connected between the first output terminal and a second power supply potential point;

a fourth switching transistor connected between the second output terminal and the second power supply potential point, wherein

one of the third switching transistor and the fourth switching transistor is turned on or off depending on a power supply direction in which power is supplied to an inductive load connected between the first output terminal and the second output terminal, and the first switching transistor or the second switching transistor is controllably turned on and off, to thereby supply an adjusted power in a forward direction or in an inverse direction to the inductive load; and

a guardring of an N-type semiconductor region is disposed only around the third switching transistor and the fourth switching transistor, the guardring being connected to the second power supply potential point.

16. The integrated circuit device according to claim 15, wherein each of the third switching transistor and the fourth switching transistor is an N-channel MOSFET having a back gate region and a drain region where the N-channel MOSFET is formed in a P-type semiconductor substrate.

17. The integrated circuit device according to claim 16, wherein the back gate region is disposed between the drain region and the guardring.

18. The integrated circuit device according to claim 15, wherein each of the third switching transistor and the fourth switching transistor is an N-channel DMOSFET having a drain region where the N-channel DMOSFET is formed in an N-type diffusion layer provided in a P-type semiconductor substrate.

19. The integrated circuit device according to claim 18, further comprising a P-type isolation region disposed between the drain region and the guardring.

20. The integrated circuit device according to claim 15, wherein each of the third switching transistor and the fourth switching transistor is an NPN-type bipolar transistor formed in an N-type diffusion layer provided in a P-type semiconductor substrate.