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Modified susceptor for use in chemical vapor deposition process

  • US 6,444,027 B1
  • Filed: 05/08/2000
  • Issued: 09/03/2002
  • Est. Priority Date: 05/08/2000
  • Status: Expired due to Term
First Claim
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1. A susceptor for supporting a semiconductor wafer during a chemical vapor deposition process wherein an epitaxial silicon layer is grown on the semiconductor wafer, the semiconductor wafer having a front surface and a back surface, the susceptor comprising:

  • a porous surface in generally parallel, opposed relationship with the back surface of the semiconductor wafer supported by the susceptor to permit gas flow through the susceptor for contact with the back surface of said semiconductor wafer, the porous surface having a density of openings between about 0.2 openings/cm2 and about 4 openings/cm2; and

    an edge ring surrounding the periphery of the susceptor.

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