Corrosion resistant component of semiconductor processing equipment and method of manufacturing thereof

• US 6,444,083 B1
• Filed: 06/30/1999
• Issued: 09/03/2002
• Est. Priority Date: 06/30/1999
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Steger, Robert, Chang, Chris
• Primary Examiner(s): GOUDREAU, GEORGE A
• Application Number:
  US09/343,692
• Time in Patent Office: 1,161 Days
• Field of Search: 118/723.R, 118/715, 118/720, 427/446, 427/453, 216/75, 216/95, 216/96, 156/345.V
• US Class Current: 156/345.48
• CPC Class Codes: C23C 18/36 using hypophosphites
• CPC Class Codes: C23C 28/00 Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
• CPC Class Codes: C23C 28/321 with at least one metal alloy layer
• CPC Class Codes: C23C 28/34 including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
• CPC Class Codes: C23C 28/345 with at least one oxide layer

Abstract

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.

Claims

1. A process for coating a metal surface of a component of semiconductor processing equipment, the processing comprising:

(a) depositing a phosphorus nickel plating on a metal surface of a component of semiconductor processing equipment;

(b) depositing a ceramic coating on said phosphorus nickel plating, wherein said ceramic coating forms an outermost surface, wherein the ceramic coating is alumina and the metal surface is anodized or unanodized aluminum or an aluminum alloy.

2. The process for coating according to claim 1, wherein said phosphorus nickel plating is deposited by electroless plating.

3. The process for coating according to claim 1, wherein said component comprises a plasma chamber sidewall and said phosphorus nickel plating is deposited over an exposed inner surface of said sidewall.

4. The process for coating according to claim 1, wherein said phosphorous nickel plating includes about 9 to about 12 weight percent phosphorous.

5. The process for coating according to claim 1, wherein said phosphorus nickel plating is deposited to a thickness ranging from about 0.002 to about 0.004 inches.

6. The process for coating according to claim 1, further comprising subjecting said phosphorus nickel plating to a surface roughening treatment prior to depositing said ceramic coating, said ceramic coating being deposited on the roughened phosphorus nickel plating by plasma spraying said ceramic coating onto said phosphorus nickel plating to overcoat all or portions of said phosphorus nickel plating.

7. The process for coating according to claim 1, wherein said ceramic coating is deposited to a thickness ranging from about 0.005 to about 0.040 inches.

8. A component of semiconductor processing equipment comprising:

(a) a metal surface;

(b) a phosphorus nickel plating on said metal surface; and

(c) a ceramic coating on said phosphorus nickel plating wherein said ceramic coating forms an outermost surface, wherein the ceramic coating is alumina and the metal surface is anodized or unanodized aluminum or an aluminum alloy.

9. The component according to claim 8, wherein said phosphorous nickel plating contains about 9 to about 12 weight percent of phosphorous.

10. The component according to claim 8, wherein said phosphorus nickel plating has a thickness ranging from about 0.002 to about 0.004 inches.

11. The component according to claim 8, wherein said ceramic coating is a plasma sprayed alumina coating having a thickness in a range from about 0.005 to 0.030 inches.

12. The component according to claim 8, wherein said component is a plasma chamber wall.

13. The component according to claim 8, wherein said ceramic coating is fissure resistant.

14. The component according to claim 8, wherein the phosphorus nickel plating includes a roughened surface in contact with the ceramic coating and the ceramic coating is a thermally sprayed coating.

15. A method of processing a semiconductor substrate in a plasma chamber containing the component of claim 8, the method comprising contacting an exposed surface of the semiconductor substrate with plasma.

16. A process for coating a metal surface of a component of semiconductor processing equipment, the processing comprising:

(a) depositing a phosphorus nickel plating on a metal surface of a component of semiconductor processing equipment;

(b) depositing a ceramic coating on said phosphorus nickel plating, wherein said ceramic coating forms an outermost surface, wherein said component comprises a plasma chamber sidewall, said phosphorus nickel plating is deposited over an exposed inner surface of said sidewall and said ceramic coating comprises Al₂O₃, SiC, Si₃N₄, BC or AlN.

17. A process for coating a metal surface of a component of semiconductor processing equipment, the processing comprising:

(a) depositing a phosphorus nickel plating on a metal surface of a component of semiconductor processing equipment;

(b) depositing a ceramic coating on said phosphorus nickel plating, wherein said ceramic coating forms an outermost surface, wherein said component comprises a plasma chamber sidewall, said phosphorus nickel plating is deposited over an exposed inner surface of said sidewall; and

subjecting said phosphorus nickel plating to a surface roughening treatment prior to depositing said ceramic coating, said ceramic coating being deposited on the roughened phosphorus nickel plating by plasma spraying said ceramic coating onto said phosphorus nickel plating to overcoat all or portions of said phosphorus nickel plating.

18. A component of semiconductor processing equipment comprising:

(a) a metal surface;

(b) a phosphorus nickel plating on said metal surface; and

(c) a ceramic coating on said phosphorus nickel plating wherein said ceramic coating forms an outermost surface, said ceramic coating is a plasma sprayed alumina coating having a thickness in a range from about 0.005 to 0.030 inches and said component is a plasma chamber wall.

20. A method of processing a semiconductor substrate in a plasma chamber containing the component of claim 18, the method comprising contacting an exposed surface of the semiconductor substrate with plasma.

19. A component of semiconductor processing equipment comprising:

(a) a metal surface;

(b) a phosphorus nickel plating on said metal surface; and

(c) a ceramic coating on said phosphorus nickel plating wherein said ceramic coating forms an outermost surface, said ceramic is Al₂O₃, SiC, Si₃N₄, BC or AlN and said component is a plasma chamber wall.

21. A method of processing a semiconductor substrate in a plasma chamber containing the component of claim 19, the method comprising contacting an exposed surface of the semiconductor substrate with plasma.

22. A method of processing a semiconductor substrate in a plasma chamber containing a component, the component comprising:

(a) a metal surface;

(b) a phosphorus nickel plating on the metal surface; and

(c) a thermally sprayed ceramic coating on the phosphorus nickel plating, the ceramic coating forming an outermost surface, the ceramic is Al₂O₃, SiC, Si₃N₄, BC or AlN, the phosphorus nickel plating includes a roughened surface in contact with the ceramic coating;

wherein the method comprises contacting an exposed surface of the semiconductor substrate with plasma.