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Method for processing substrates using gaseous silicon scavenger

  • US 6,444,137 B1
  • Filed: 07/01/1996
  • Issued: 09/03/2002
  • Est. Priority Date: 07/31/1990
  • Status: Expired due to Fees
First Claim
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1. A plasma etch process comprising:

  • a) providing a vacuum chamber for forming and maintaining a plasma therein;

    b) providing an article to be processed by said plasma on a support in the chamber;

    c) supplying a fluorine-containing etch gas to the chamber;

    d) coupling RF energy into the chamber for forming and maintaining a plasma of said etch gas in the chamber; and

    e) supplying to the chamber a gaseous source of silicon or carbon in addition to said etch gas so as to form a passivating polymer on said article.

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