Method for processing substrates using gaseous silicon scavenger
First Claim
1. A plasma etch process comprising:
- a) providing a vacuum chamber for forming and maintaining a plasma therein;
b) providing an article to be processed by said plasma on a support in the chamber;
c) supplying a fluorine-containing etch gas to the chamber;
d) coupling RF energy into the chamber for forming and maintaining a plasma of said etch gas in the chamber; and
e) supplying to the chamber a gaseous source of silicon or carbon in addition to said etch gas so as to form a passivating polymer on said article.
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Abstract
A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
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Citations
19 Claims
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1. A plasma etch process comprising:
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a) providing a vacuum chamber for forming and maintaining a plasma therein;
b) providing an article to be processed by said plasma on a support in the chamber;
c) supplying a fluorine-containing etch gas to the chamber;
d) coupling RF energy into the chamber for forming and maintaining a plasma of said etch gas in the chamber; and
e) supplying to the chamber a gaseous source of silicon or carbon in addition to said etch gas so as to form a passivating polymer on said article. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A plasma etch process comprising;
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a) providing a vacuum chamber for generating a plasma;
b) supporting an article to be processed on a support in the chamber;
c) supplying a fluorine-containing gas to the chamber;
d) supplying a silicon-containing gas to the chamber so as to form a passivating polymer on the surface of said article; and
e) coupling RF energy into the chamber for maintaining a plasma in said chamber for processing said article. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A plasma etch process comprising:
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a) providing a vacuum chamber for forming and maintaining a plasma therein;
b) providing an article having an oxygen-containing layer over a non-oxygen-containing layer thereon to be processed by said plasma on a support in said chamber;
c) supplying a fluorine-containing etch gas to the chamber;
d) coupling RF energy into the chamber for forming and maintaining a plasma of said etch gas in the chamber; and
e) supplying to the chamber a fluorine-consuming silicon or carbon-containing gas in addition to said etch gas so as to form a selectivity-enhancing polymer on said article to selectively etch the oxygen-containing layer. - View Dependent Claims (18, 19)
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Specification