Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
First Claim
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1. A precursor composition comprising one or more complexes of the formula:
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wherein;
M is a transition metal;
each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are not both H, optionally any of the R groups are joined together to form a ring or rings, and optionally the R groups are replaced by multiple bonds between atoms;
each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
x=1 to 3;
n=0 to 4;
y=0 to 4; and
further wherein the precursor composition includes at least two complexes containing different metals.
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Abstract
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.
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9 Claims
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1. A precursor composition comprising one or more complexes of the formula:
-
wherein;
M is a transition metal;
each R group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a halide, or a silylated hydrocarbyl group, with the proviso that R3 and R4 are not both H, optionally any of the R groups are joined together to form a ring or rings, and optionally the R groups are replaced by multiple bonds between atoms;
each L group is independently H, a hydrocarbyl group, a halogenated hydrocarbyl group, a silylated hydrocarbyl group, or a halide;
x=1 to 3;
n=0 to 4;
y=0 to 4; and
further wherein the precursor composition includes at least two complexes containing different metals. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification