Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same

• US 6,445,006 B1
• Filed: 07/27/1999
• Issued: 09/03/2002
• Est. Priority Date: 12/20/1995
• Status: Expired due to Term

• Current Assignee: Nantero Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Brandes, George R., Xu, Xueping
• Primary Examiner(s): Ramsey, Kenneth J.
• Application Number:
  US09/361,910
• Time in Patent Office: 1,134 Days
• Field of Search: 445/24, 438/105, 438/99, 257/76, 257/24, 324/419
• US Class Current: 257/76
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01J 1/304 Field-emissive cathodes
• CPC Class Codes: H01J 2201/30469 Carbon nanotubes (CNTs)
• CPC Class Codes: H01J 2201/319 Circuit elements associated with the emitters by direct integration
• CPC Class Codes: H01J 9/025 of field emission cathodes
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/776 Ceramic powder or flake

Abstract

A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

Claims

1. A microelectronic or microelectromechanical device, comprising:

a substrate, wherein the substrate includes an oxide layer and an etch stop layer for the oxide layer; and

a fiber formed of a carbon-containing material.

2. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber electrically interconnects at least two non-insulative regions on the substrate.

3. The microelectronic and/or microelectromechanical device of claim 1, wherein the substrate surface comprises at least one transition metal or compound or alloy thereof.

4. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber is grown catalytically in situ on a surface of the substrate from a carbon-containing precursor material.

5. The microelectronic and/or microelectromechanical device of claim 1, wherein the substrate comprises at least one material selected from the group consisting of ceramics, glasses, semiconductors, metals and alloys.

6. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber has an average diameter less than 10 microns.

7. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber has an average length to width ratio greater than about 2.

8. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber comprises a catalyst material comprising at least one transition metal compound.

9. The microelectronic and/or microelectromechanical device of claim 1, wherein the fiber comprises a catalyst material comprising at least one transition metal selected from the group consisting of Fe, Co, Ni, Mn, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pd, Pt, Cu and Zn.

10. The microelectronic and/or microelectromechanical device of claim 1, wherein the substrate surface comprises a metal film.

11. The microelectronic and/or microelectromechanical device of claim 10, wherein the at least one transition metal is selected from the group consisting of Fe, Co, Ni, Mn, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pd, Pt, Cu and Zn.

12. The microelectronic and/or microelectromechanical device of claim 1, wherein the substrate surface comprises a semiconductor or dielectric material.

13. The microelectronic and/or microelectromechanical device of claim 1, comprising a microelectronic device including a pn junction, wherein said carbon-containing fibcr is doped to form the pn junction.

14. The microelectronic and/or microelectromechanical device of claim 1, in which the carbon containing fiber is used to make an ohmic electrical contact.

15. The microelectronic and/or microelectromechanical device of claim 1, in which the carbon containing fiber is used to make a non-ohmic electrical contact.

16. The microelectronic and/or microelectromechanical device of claim 1, in which the carbon containing fiber has defects or impurities added to alter electrical conductivity.

17. The microelectronic and/or microelectromechanical device of claim 1, comprising a microelectronic device including a field effect transistor.

18. The microelectronic and/or microelectromechanical device of claim 1, comprising a carbon-containing fiber connecting two electrodes and a third electrode for modulating the conductivity of the carbon containing fiber.

19. A method of forming a carbon-containing fiber on a substrate, as a component of a microelectronic or microelectromechanical device, comprising the steps of:

growing at least one carbon-containing fiber catalytically on a surface of the substrate by heating the substrate in the presence of a carbon source to a temperature sufficient to grow the fiber on the substrate surface, wherein the carbon-containing fiber is intersectingly grown from two different regions of the substrate, whereby intersection of respective growths forms the carbon-containing fiber.

20. The method of claim 19, wherein the carbon-containing fiber electrically connects two or more non-insulative regions on the substrate.

21. The method of claim 19, wherein the carbon-containing fiber is intersectingly grown from two different regions of the substrate, whereby intersection of respective growths forms the carbon-containing fiber.

22. The method of claim 19, wherein the fiber is growncatalytically in situ on a surface of the substrate from a carbon-containing precursor material.

23. The method of claim 19, wherein the substrate comprises at least one material selected from the group consisting of ceramics, glasses, semiconductors, metals and alloys.

24. The method of claim 19, wherein the fiber has an average diameter less than 10 microns.

25. The method of claim 19, wherein the fiber has an average length to width ratio greater than about 2.

26. The method of claim 19, wherein the fiber comprises a catalyst material comprising at least one transition metal compound.

27. The method of claim 19, further comprising connecting the fiber to a surface or element of the device.

28. The method of claim 27, wherein the connecting is conducted after growth of the fiber.

29. The method of claim 27, wherein the connecting is conducted during growth of the fiber.

30. The method of claim 19, wherein the fiber comprises a catalyst material comprising at least one transition metal selected from the group consisting of Fe, Co, Ni, Mn, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pd, Pt, Cu and Zn.

31. The method of claim 19, wherein the substrate surface comprises a metal film.

32. The method of claim 19, wherein the substrate surface comprises at least one transition metal or compound or alloy thereof.

33. The method of claim 32, wherein the at least one transition metal is selected from the group consisting of Fe, Co, Ni, Mn, Cr, Mo, W, Re, Ru, Os, Rh, Ir, Pd, Pt, Cu and Zn.

34. The method of claim 19, wherein the substrate surface comprises a semiconductor or dielectric material.

35. The method of claim 19, wherein the substrate includes an oxide layer and an etch stop layer for the oxide layer.

36. The method of claim 19, wherein said device comprises a microelectronic device including a pn junction, wherein said carbon-containing fiber is doped to form the pn junction.

37. The method of claim 19, wherein the carbon containing fiber is used to make an ohmic electrical contact.

38. The method of claim 19, wherein the carbon containing fiber is used to make a nonohmic electrical contact.

39. The method of claim 19, wherein an electrical junction is formed between two carbon-containing fibers.

40. The method of claim 19, wherein the carbon containing fiber has defects or impurities added to alter electrical conductivity.

41. The method of claim 19, wherein the dopant impurities comprise H, B, Al, N, P, Li, Be, Na, or K.

42. The method of claim 19, wherein carbon microfiber dopant impurities are introduced after carbon microfiber growth.

43. The method of claim 19, wherein said device comprises a microelectronic device including a field effect transistor.

44. The method of claim 19, wherein the heating is carried out at a temperature from about 350°

C. to about 1200°

C. in acarbon-containing gas.

45. The method of claim 44, wherein the carbon-containing gas is selected from the group consisting of hydrocarbons, carbon-containing compounds and carbon monoxide.

46. The method of claim 19, comprising the use of a catalyst for growth of the carbon-containing fiber.

47. The method of claim 46, wherein the catalyst is in a particulate form.

48. The method of claim 47, wherein the catalyst comprises catalyst particles having an average diameter less than about 200 nanometers.

49. The method of claim 46, wherein the catalyst is in the form of a catalyst film.

50. The method of claim 49, wherein the catalyst film has a thickness of less than about 1 micrometer.

51. The method of claim 46, wherein the catalyst is patterned on the substrate.

52. A method of forming a carbon-containing fiber on a substrate, wherein the carbon-containing fiber is a component of a microelectronic or microelectromechanical device, comprising the step of:

growing at least one carbon-containing fiber catalytically on a surface of the substrate by heating the substrate in the presence of a carbon source to a temperature sufficient to grow the fiber on the substrate surface, wherein the substrate includes an oxide layer and an etch stop layer for the oxide layer.

53. A method of forming a carbon-containing fiber on a substrate, wherein the carbon-containing fiber is a component of a microelectronic or microelectromechanical device, comprising the step of:

growing at least one carbon-containing fiber catalytically on a surface of the substrate by heating the substrate in the presence of a carbon source to a temperature sufficient to grow the fiber on the substrate surface, wherein the substrate includes an oxide layer and an etch stop layer for the oxide layer.

54. A method of forming a carbon-containing fiber on a substrate, wherein the carbon-containing fiber is a component of a microelectronic or microelectromechanical device, comprising the step of:

growing at least one carbon-containing fiber catalytically on a surface of the substrate by heating the substrate in the presence of a carbon source to a temperature sufficient to grow the fiber on the substrate surface, wherein the carbon-containing fiber is intersectingly grown from two different regions of the substrate, whereby intersection of respective growths forms the carbon-containing fiber.

55. A method of forming microelectronic or microelectromechanical device components that comprise carbon-containing fibers, comprising the step of:

growing at least one carbon-containing fiber catalytically on a surface by heating the surface in the presence of a carbon source to a temperature sufficient to grow the fiber on the surface, wherein impurities are introduced during carbon microfiber growth.