Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings

• US 6,445,009 B1
• Filed: 08/08/2000
• Issued: 09/03/2002
• Est. Priority Date: 08/08/2000
• Status: Expired due to Term

• Current Assignee: Centre National De La Recherche Scientifique
• Original Assignee: Centre National De La Recherche Scientifique
• Inventors: Semond, Fabrice, Damilano, Benjamin Gérard Pierre, Leroux, Mathieu, Massies, Jean, Grandjean, Nicolas Pierre
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): Wilson, Christian D.
• Application Number:
  US09/634,654
• Time in Patent Office: 756 Days
• Field of Search: 257/12, 257/13, 257/14, 257/15, 257/18, 257/85, 438/962
• US Class Current: 257/85
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: Y10S 438/962 Quantum dots and lines

Abstract

A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the device is also disclosed. The device can be incorporated in electroluminescent devices and exchange devices, emitting white light in particular.

Claims

1. A device comprising:

a silicon substrate; and

a coating provided on said substrate, said coating comprising at least one stacking including a plane of quantum dots of GaN or GaInN emitting visible light at ambient temperature in a layer of AlN or GaN respectively.

2. A device according to claim 1, wherein the silicon substrate is a substrate of silicon (111).

3. A device according to claim 2, wherein the layer of AIN or GaN is a relaxed or slightly strained AlN or GaN layer.

4. A device according to claim 2, wherein the emission wavelength of visible light of the plane of quantum dots is determined by the thickness of the plane of quantum dots.

5. A device according to claim 2, wherein the plane or layer of quantum dots of GaN has a nominal thickness greater than three molecular layers (MLs).

6. A device according to claim 5, wherein the plane of quantum dots has a nominal thickness of 4 to 12 molecular layers (MLs).

7. A device according to claim 2, wherein the coating comprises several stackings.

8. A device according to claim 1, wherein the layer of AIN or GaN is a relaxed or slightly strained AIN or GaN layer.

9. A device according to claim 8, wherein the emission wavelength of visible light of the plane of quantum dots is determined by the thickness of the plane of quantum dots.

10. A device according to claim 8, wherein the plane or layer of quantum dots of GaN has a nominal thickness greater than three molecular layers (MLs).

11. A device according to claim 10, wherein the plane of quantum dots has a nominal thickness of 4 to 12 molecular layers (MLs).

12. A device according to claim 8, wherein the coating comprises several stackings.

13. A device according to claim 1, wherein the emission wavelength of visible light of the plane of quantum dots is determined by the thickness of the plane of quantum dots.

14. A device according to claim 13, wherein the plane or layer of quantum dots of GaN has a nominal thickness greater than three molecular layers (MLs).

15. A device according to claim 14, wherein the plane of quantum dots has a nominal thickness of 4 to 12 molecular layers (MLs).

16. A device according to claim 13, wherein the coating comprises several stackings.

17. A device according to claim 1, wherein the plane or layer of quantum dots of GaN has a nominal thickness greater than three molecular layers (MLs).

18. A device according to claim 17, wherein the plane of quantum dots has a nominal thickness of 4 to 12 molecular layers (MLs).

19. A device according to claim 1, wherein the coating comprises several stackings.

20. A device according to claim 1, wherein at least two of the stackings comprise quantum dot planes of different determined thickness each emitting visible light of a determined wavelength, and colour, different from the other plane of the quantum dots.

21. A device according to claim 20, wherein each of the quantum dot planes of each of the stackings has a determined thickness, different from the others, each of the quantum dot planes thus emitting visible light of a wavelength, and a determined colour, different form the others.

22. A device according to claim 20, wherein the combination of visible light of determined and different wavelengths and colours produces white light.

23. A device according to claim 22, wherein the coating comprises the superposition of 4 stackings whose quantum dot planes have respectively a nominal thickness of 4,,6, 9 and 12 MLs.

24. An electroluminescent device comprising the device according to claim 1.

25. A device according to claim 24, emitting white light.

26. A lighting device comprising the device according to claim 1.

27. A device according to claim 26 emitting white light.

28. A device according to claim 1, which is a LED (electroluminescent diode).