Semiconductor device having trench-structured rectangular unit cells
First Claim
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1. A semiconductor device having a plurality of trench-structured rectangular unit cells comprising:
- a first conductive type drain region;
a second conductive type base region formed adjacent to said first conductive type drain region;
a trench formed in an area surrounding said second conductive type base region;
a gate electrode formed within said trench with a gate insulating film interposed between said gate electrode and said trench;
a first conductive type source region having a continuous shape formed along said trench on the surface of said second conductive type base region; and
a region having no source is formed at a center of a rectangular surface of each of said trench-structured rectangular unit cells and extends outwardly on diagonal lines that radially extend from said center towards corners of each of said trench-structured rectangular unit cells.
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Abstract
A semiconductor device is provided which has a structure being suitable for scale-down of cells and is capable of, without an increase in channel resistance, improving a resistance property against device breakdown required when a semiconductor device breaks down due to inverse voltages applied. In the above semiconductor device, a source region narrowing section, in which width dimension on a plane of a source region is partially limited, is formed at the cell corner section disposed on diagonal lines and in a vicinity of the diagonal lines.
23 Citations
5 Claims
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1. A semiconductor device having a plurality of trench-structured rectangular unit cells comprising:
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a first conductive type drain region;
a second conductive type base region formed adjacent to said first conductive type drain region;
a trench formed in an area surrounding said second conductive type base region;
a gate electrode formed within said trench with a gate insulating film interposed between said gate electrode and said trench;
a first conductive type source region having a continuous shape formed along said trench on the surface of said second conductive type base region; and
a region having no source is formed at a center of a rectangular surface of each of said trench-structured rectangular unit cells and extends outwardly on diagonal lines that radially extend from said center towards corners of each of said trench-structured rectangular unit cells.
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2. A semiconductor device having a plurality of trench-structured rectangular unit cells comprising:
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a first conductive type drain region;
a second conductive type base region formed adjacent to said first conductive type drain region;
a trench formed in an area surrounding said second conductive type base region;
a gate electrode formed within said trench with a gate insulating film interposed between said gate electrode and said trench;
a first conductive type source region having a continuous shape formed along said trench on the surface of said second conductive type base region; and
a source region narrowing section which partially limits width dimensions on a plane of said first conductive type source region is formed on diagonal lines on a rectangular surface of said trench-structured rectangular unit cells and in a vicinity of said diagonal lines of said trench-structured rectangular unit cells, wherein said diagonal lines extend from corners of said rectangular surface towards a center of said rectangular surface, and said source region narrowing section has a width which is less than a width of other sections of said first conductive type source region. - View Dependent Claims (3, 4, 5)
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Specification