Bipolar junction transistor incorporating integral field plate
First Claim
1. A bipolar junction transistor structure comprising:
- a collector region, a base region, and an emitter region formed within a semiconductor body, said collector and base regions defining therebetween a collector/base junction intersecting a top surface of the semiconductor body;
a single-layer conductive electrode which contacts the emitter region and which is vertically aligned with and which lies directly above the collector/base junction at its intersection with the top surface, said conductive electrode extending at least a predetermined distance in a direction toward and disposed over the collector region and also extending at least a predetermined distance in a direction toward and disposed over the base region, thereby forming an integral field plate structure and emitter region contact; and
an interconnect element contacted to the conductive electrode to provide an electrical connection to the emitter region and to the field plate structure.
7 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor process is disclosed which forms a field plate structure that integrally contacts an emitter region of a bipolar junction transistor by construction, without intervening interconnect layers or contacts. In one embodiment, a single-layer polysilicon electrode forms a field plate electrode which integrally interconnects to a traditional diffused emitter region formed before the polysilicon layer is deposited. This allows for deeper emitter regions required by the deep base regions needed for high-voltage bipolar devices. Moreover, the polysilicon layer, including the polysilicon electrode forming the field plate electrode, may be used as a local interconnect layer.
10 Citations
16 Claims
-
1. A bipolar junction transistor structure comprising:
-
a collector region, a base region, and an emitter region formed within a semiconductor body, said collector and base regions defining therebetween a collector/base junction intersecting a top surface of the semiconductor body;
a single-layer conductive electrode which contacts the emitter region and which is vertically aligned with and which lies directly above the collector/base junction at its intersection with the top surface, said conductive electrode extending at least a predetermined distance in a direction toward and disposed over the collector region and also extending at least a predetermined distance in a direction toward and disposed over the base region, thereby forming an integral field plate structure and emitter region contact; and
an interconnect element contacted to the conductive electrode to provide an electrical connection to the emitter region and to the field plate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A structure as in claim wherein:
the single-layer conductive electrode comprises a polysilicon electrode.
-
9. A bipolar junction transistor structure comprising:
-
a collector region formed within a semiconductor body having, where the collector region reaches a top surface of the semiconductor body, a first dielectric layer thereabove;
a base region formed within the collector region having, where the base region reaches the top surface of the semiconductor body, a second dielectric layer thereabove, said collector and base regions defining therebetween a collector/base junction intersecting the top surface of the semiconductor body;
an emitter region formed within the base region;
a polysilicon electrode disposed above and contacting the emitter region, and further disposed directly above and vertically aligned with the intersection of the collector/base junction with the top surface of the semiconductor body, said conductive electrode extending at least a predetermined distance in a direction toward and disposed over the collector region and also extending at least a predetermined distance in a direction toward and disposed over the base region, whereby the conductive electrode forms an integral field plate structure and emitter region contact; and
an interconnect element contacted to the conductive electrode for providing an electrical connection to the emitter region and for biasing the field plate structure with the emitter region voltage. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
the predetermined distance toward the collector region falls within an approximate a range of 8-12 microns; and
the predetermined distance toward the base region falls within an approximate range of 3-4 microns.
-
-
12. A structure as in claim 9 wherein the contact to the polysilicon electrode is disposed above the emitter region.
-
13. A structure as in claim 9 wherein the contact to the polysilicon electrode is disposed overlying a dielectric layer above the base region.
-
14. A structure as in claim 9 wherein the contact to the polysilicon electrode is disposed overlying a dielectric layer above the collector region outside of the base region.
-
15. A structure as in claim 9 wherein the bipolar junction transistor structure comprises a vertical junction transistor structure.
-
16. A structure as in claim 9 wherein the bipolar junction transistor structure comprises a lateral junction transistor structure.
Specification